Backside controlled MEMS capacitive sensor and interface and method

• US 8,217,475 B2
• Filed: 05/15/2008
• Issued: 07/10/2012
• Est. Priority Date: 05/15/2008
• Status: Active Grant

• Current Assignee: Custom Sensors & Technologies Incorporated (Schneider Electric SE)
• Original Assignee: Custom Sensors & Technologies Incorporated (Schneider Electric SE)
• Inventors: Seesink, Peter, Abed, Omar
• Primary Examiner(s): Ha, Nathan
• Assistant Examiner(s): Kalam, Abul
• Application Number:
  US12/121,070
• Publication Number:
  US 20090283846A1
• Time in Patent Office: 1,517 Days
• Field of Search: 257/419
• US Class Current: 257/419
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

Described herein is the sense element assembly for a capacitive pressure sensor and method for creating same that has increased sensitivity despite the parasitic capacitance that is created. The capacitive sensor element assembly, comprises a first semiconductive layer, and a first conductive layer, a first dielectric layer into which a cavity has been formed, the dielectric layer lying between the first semiconductive layer and the first conductive layer, wherein an electrical connection is made to the second conductive layer. A preferred method for fabricating a capacitive sensor assembly of the present invention comprises the steps of forming a dielectric layer on top of a conductive handle wafer; creating at least one cavity in the dielectric layer, bonding a thin semiconductive layer to the dielectric layer and connecting an operational amplifier to the input of the capacitive sensor assembly to overcome the parasitic capacitance formed during fabrication.

Claims

1. A capacitive sensor element assembly, comprising:

a semiconductive layer,

a conductive layer,

a first dielectric layer defining a cavity, the first dielectric layer being disposed between the semiconductive layer and the conductive layer, and

an operational amplifier with an output terminal electrically connected to the conductive layer of the capacitive sensor element assembly and an input terminal electrically connected to the semiconductive layer of the capacitive sensor element assembly to reduce effects of parasitic capacitance of the capacitive sensor element assembly,

wherein a conductor is disposed through the first dielectric layer to connect the conductive layer to the semiconductive layer.

2. The capacitive sensor element assembly of claim 1, wherein the operational amplifier is coupled to an input of the conductor.

3. The capacitive sensor element assembly of claim 1 further comprising a second dielectric layer on the bottom of the cavity in the first dielectric layer.

4. The capacitive sensor element assembly of claim 1, wherein the first dielectric layer is a thin layer of oxide.

5. The capacitive sensor element assembly of claim 1 wherein the semiconductive layer is thinner than the conductive layer and the conductive layer is thick enough to support the semiconductive layer and the first dielectric layer.

6. The capacitive sensor element assembly of claim 1, wherein the operational amplifier is disposed on the semiconductive layer and electrically connected to the conductive layer by the conductor electrical connection.

7. A capacitive sensor assembly comprising:

a semiconductive layer,

a conductive layer,

a first dielectric layer defining a cavity, the first dielectric layer-being disposed between the semiconductive layer and the conductive layer,

an operational amplifier with an output terminal electrically connected to the conductive layer of the capacitive sensor assembly and an input terminal electrically connected to the semiconductive layer of the capacitive sensor assembly to reduce effects of parasitic capacitance of the capacitive sensor assembly, and

wherein a conductor extends through and electrically connects the conductive layer to the semiconductive layer.

8. The capacitive sensor assembly of claim 7, wherein the operational amplifier is disposed on the semiconductive layer.

9. A capacitive sensor comprising:

a semiconductive layer,

a conductive layer,

a first dielectric layer defining a cavity, the first dielectric layer being disposed between the semiconductive layer and the conductive layer;

a connecting means for electrically connecting the conductive layer to the semiconductive layer, the connecting means extending through the first dielectric layer to electrically connect the conductive layer to the semiconductive layer; and

wherein the capacitive sensor is configured to be connected to an operational amplifier with an output terminal electrically connectable to the conductive layer of the capacitive sensor and an input terminal electrically connectable to the semiconductive layer of the capacitive sensor to reduce effects of parasitic capacitance of the capacitive sensor.

10. The capacitive sensor of claim 9, wherein the operational amplifier is electrically coupled to an input of the connecting means.

11. A capacitive sensor element assembly comprising:

a semiconductive layer,

a conductive layer underlying the semiconductive layer,

a first dielectric layer defining a cavity, the first dielectric layer being disposed between the semiconductive layer and the conductive layer,

a conductor extending through the first dielectric layer to electrically connect the conductive layer to the semiconductive layer, and

an operational with an output terminal electrically connected to the conductive layer of the capacitive sensor element assembly and an input terminal electrically connected to the semiconductive layer of the capacitive sensor element assembly to reduce effects of parasitic capacitance of the capacitive sensor element assembly.

12. The capacitive sensor element assembly of claim 11, wherein the operational amplifier is coupled to an input of the conductor.

13. The capacitive sensor element assembly of claim 11 further comprising a second dielectric layer on the bottom of the cavity in the first dielectric layer.

14. The capacitive sensor element assembly of claim 11 further comprising a complementary metal-oxide semiconductor (CMOS), wherein the conductor extending through the semiconductive layer electrically connect the conductive layer to the CMOS.