Remote plasma processing of interface surfaces
First Claim
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1. A semiconductor processing apparatus, comprising:
- a processing chamber;
a load lock coupled to the processing chamber via a transfer port;
a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock;
a remote plasma source configured to provide a remote plasma to the load lock; and
an ion filter configured to filter ions from a flow of the remote plasma.
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Abstract
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.
32 Citations
19 Claims
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1. A semiconductor processing apparatus, comprising:
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a processing chamber; a load lock coupled to the processing chamber via a transfer port; a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock; a remote plasma source configured to provide a remote plasma to the load lock; and an ion filter configured to filter ions from a flow of the remote plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A load lock for a semiconductor processing apparatus, the load lock comprising:
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an atmospheric transfer port and a chamber transfer port; a wafer pedestal disposed in an interior of the load lock and configured to support a wafer in the load lock; a wafer heater configured to heat a wafer positioned in the load lock; a remote plasma source coupled to the load lock, the remote plasma source comprising an outlet configured to direct a flow of a remote plasma in a direction normal to a wafer supporting surface of the wafer pedestal; and an ion filter configured to remove ions from the flow of the remote plasma flowing from the remote plasma source toward the heated wafer pedestal. - View Dependent Claims (15, 16, 17, 18)
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19. A semiconductor processing apparatus, comprising:
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a processing chamber; a load lock coupled to the processing chamber via a transfer port; a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock; a remote plasma source configured to provide a remote plasma to the load Lock; an ion filter configured to filter ions from a flow of the remote plasma to the wafer; and an ultraviolet light source configured to expose the wafer in the load lock to ultraviolet light.
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Specification