Chemical mechanical polishing pad and methods of making and using same
First Claim
Patent Images
1. A shape memory chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;
- comprising;
a polishing layer in a densified state;
wherein the polishing layer comprises a shape memory matrix material transformable between an original shape and a programmed shape;
wherein the polishing layer exhibits an original thickness, OT, when the shape memory matrix material is in the original shape;
wherein the polishing layer exhibits a densified thickness, DT, in the densified state when the shape memory matrix material is in the programmed shape;
wherein the DT is ≦
80% of the OT;
wherein the shape memory matrix material exhibits a ≧
70% reduction in storage modulus as the temperature of the shape memory matrix material is raised from (Tg−
20)°
C. to (Tg+20)°
C., wherein Tg is the glass tansition temperature of the shape memory matrix material measured by dynamical mechanical analysis taking the inflection point in the storage modulus versus temperature curve as the Tg; and
,wherein the polishing layer has a polishing surface adapted for polishing the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
Shape memory chemical mechanical polishing pads are provided, wherein the shape memory chemical mechanical polishing pads comprise a polishing layer in a densified state. Also provided are methods of making the shape memory chemical mechanical polishing pads and for using them to polish substrates.
-
Citations
6 Claims
-
1. A shape memory chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;
- comprising;
a polishing layer in a densified state; wherein the polishing layer comprises a shape memory matrix material transformable between an original shape and a programmed shape; wherein the polishing layer exhibits an original thickness, OT, when the shape memory matrix material is in the original shape; wherein the polishing layer exhibits a densified thickness, DT, in the densified state when the shape memory matrix material is in the programmed shape; wherein the DT is ≦
80% of the OT;wherein the shape memory matrix material exhibits a ≧
70% reduction in storage modulus as the temperature of the shape memory matrix material is raised from (Tg−
20)°
C. to (Tg+20)°
C., wherein Tg is the glass tansition temperature of the shape memory matrix material measured by dynamical mechanical analysis taking the inflection point in the storage modulus versus temperature curve as the Tg; and
,wherein the polishing layer has a polishing surface adapted for polishing the substrate. - View Dependent Claims (2, 3, 4, 5, 6)
- comprising;
Specification