Chemical mechanical polishing pad and methods of making and using same

• US 8,221,196 B2
• Filed: 04/15/2008
• Issued: 07/17/2012
• Est. Priority Date: 08/15/2007
• Status: Active Grant

• Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
• Original Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
• Inventors: Hreha, Richard D., Palaparthi, Ravichandra V., Vining, Benjamin John
• Primary Examiner(s): ROSE, ROBERT A
• Application Number:
  US12/103,292
• Publication Number:
  US 20090258575A1
• Time in Patent Office: 1,554 Days
• Field of Search: 451/526, 451/527, 451/533, 451/534, 451/548, 451/5, 451/8, 451/9, 451/41, 451/59
• US Class Current: 451/41
• CPC Class Codes: B24B 37/24 characterised by the composition or properties of the pad materials
• CPC Class Codes: B24B 37/26 characterised by the shape of the lapping pad surface, e.g. grooved
• CPC Class Codes: B29C 61/06 Making preforms having internal stresses, e.g. plastic memory
• CPC Class Codes: B29C 70/66 the filler comprising hollow constituents, e.g. syntactic foam

Abstract

Shape memory chemical mechanical polishing pads are provided, wherein the shape memory chemical mechanical polishing pads comprise a polishing layer in a densified state. Also provided are methods of making the shape memory chemical mechanical polishing pads and for using them to polish substrates.

Claims

1. A shape memory chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;

comprising;

a polishing layer in a densified state;

wherein the polishing layer comprises a shape memory matrix material transformable between an original shape and a programmed shape;

wherein the polishing layer exhibits an original thickness, OT, when the shape memory matrix material is in the original shape;

wherein the polishing layer exhibits a densified thickness, DT, in the densified state when the shape memory matrix material is in the programmed shape;

wherein the DT is ≦

80% of the OT;

wherein the shape memory matrix material exhibits a ≧

70% reduction in storage modulus as the temperature of the shape memory matrix material is raised from (T_g−

20)°

C. to (T_g+20)°

C., wherein T_g is the glass tansition temperature of the shape memory matrix material measured by dynamical mechanical analysis taking the inflection point in the storage modulus versus temperature curve as the T_g; and

,

wherein the polishing layer has a polishing surface adapted for polishing the substrate.

2. The shape memory chemical mechanical polishing pad of claim 1, wherein the reduction in storage modulus has a magnitude of ≧

800 MPa.

3. The shape memory chemical mechanical polishing pad of claim 1, wherein the shape memory matrix material exhibits a T_g≧

45°

C. to ≦

80°

C.

4. The shape memory chemical mechanical polishing pad of claim 1, wherein the shape memory matrix material exhibits a ≧

90% reduction in storage modulus as the temperature of the shape memory matrix material is raised from (T_g−

10)°

C. to (T_g+10)°

C.; and

wherein the reduction in storage modulus has a magnitude of ≧

800 MPa.

5. The shape memory chemical mechanical polishing pad of claim 1, wherein the shape memory matrix material comprises a reaction product of a mixture comprising glycerol propoxylate;

polycarbodiimide-modified diphenylmethane diisocyanate; and

at least one of polytetrahydrofuran and polycaprolactone.

6. The shape memory chemical mechanical polishing pad of claim 1, wherein the shape memory matrix material comprises a reaction product of a mixture comprising a polyether-based, toluene diisocyanate terminated liquid urethane prepolymer;

and a 4,4′

-methylene-bis(2-chloro aniline).