Crack free multilayered devices, methods of manufacture thereof and articles comprising the same

• US 8,222,057 B2
• Filed: 08/23/2010
• Issued: 07/17/2012
• Est. Priority Date: 08/29/2006
• Status: Expired due to Fees

• Current Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Original Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Inventors: Kryliouk, Olga, Anderson, Timothy J.
• Primary Examiner(s): Gebremariam, Samuel
• Application Number:
  US12/861,614
• Publication Number:
  US 20110042683A1
• Time in Patent Office: 694 Days
• Field of Search: 257/18, 257/11, 257/14, 438/22, 438/48
• US Class Current: 438/22
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041

Abstract

Disclosed herein is an article comprising a substrate; an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride; the interlayer being directly disposed upon the substrate and in contact with the substrate; where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and a group-III nitride layer disposed upon the interlayer; where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate; the group-III nitride layer being free from cracks.

Claims

1. An article comprising:

a substrate;

an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride;

the interlayer being directly disposed upon the substrate and in contact with the substrate;

where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and

a group-III nitride layer disposed upon the interlayer;

where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate;

the group-III nitride layer being free from cracks, wherein the interlayer is in direct contact with the group-III nitride layer.

2. The article of claim 1, where the substrate comprises silicon, SiC, sapphire (c-, a-, r- or m-oriented;

on axis or of-cut), LiAlO₂, LiGaO₂, gallium arsenide, glass, alumina, titania, zirconia, germanium, a combination of germanium and silicon, aluminum nitride, indium nitride, boron nitride, gallium nitride or a solid solution of aluminum nitride, indium nitride, boron nitride and/or gallium nitride, quartz and glass.

3. The article of claim 1, where the interlayer comprising a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride comprises aluminum indium nitride, indium boron nitride, aluminum boron nitride, gallium boron nitride, aluminum gallium nitride, gallium indium nitride, aluminum indium gallium nitride, indium gallium boron nitride, aluminum gallium boron nitride, aluminum gallium boron nitride, indium aluminum boron nitride, or aluminum gallium indium boron nitride.

4. The article of claim 1, where the interlayer comprises a chemical composition represented by the Equation (I):

A_xB_yC_zN 

 

(I)

where x+y+z=1 and x is an amount of about 0 to about 1, y is an amount of about 0 to about 1 and z is an amount of about 0 to about 1;

where A, B and C can be the same or different and can be selected from amongst indium, aluminum, boron or gallium and where N is nitrogen.

5. The article of claim 1, where the columnar film comprises columns having an average column diameter of about 0.1 micrometer to about 1 micrometer.

6. The article of claim 1, where the nanorods are aligned to be substantially perpendicular to the substrate.

7. The article of claim 1, where the nanorods are randomly aligned.

8. The article of claim 1, where the substrate comprises silica, alumina or gallium nitride, the interlayer comprises indium nitride and the group-III layer comprises gallium nitride.

9. The article of claim 1, where the substrate further comprises a buffer layer.

10. The article of claim 9, where the buffer layer comprises nuclei that nucleate the nanorods.

11. The article of claim 10, where the nuclei comprise a native group-III nitride or an alloy of a native group-III nitride.

12. A method comprising:

disposing on a substrate an interlayer comprising interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride;

the interlayer being directly disposed upon the substrate and in contact with the substrate;

where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and

disposing on the interlayer a group-III nitride layer;

where the group-III nitride layer is free from cracks and wherein the interlayer is in direct contact with the group-III nitride layer.

13. The method of claim 12, further comprising disposing a buffer layer on the substrate, the buffer layer comprising a native group-III nitride or an alloy of a native group-III nitride.

14. The method of claim 12, where the interlayer is disposed on the substrate at a temperature of about 400 to about 800°

C.

15. The method of claim 12, where the interlayer is disposed on the substrate at a temperature of about 575 to about 700°

C.

16. The method of claim 12, where the interlayer is disposed on the substrate by reacting a first reactive precursor with a halogen containing compound and a nitrogen containing compound.

17. The method of claim 16, where the first reactive precursor is selected from the group consisting of boron tribromide, trimethylaluminum, ethyldimethylindium, boron trichloride, trimethylgallium, triethylgallium, trimethylindium, triethylindium, and a combination comprising at least one of the foregoing reactive precursors.

18. The method of claim 16, wherein a ratio of the halogen containing compound to the first reactive precursor is about 1 to about 6.

19. The method of claim 16, wherein a ratio of the halogen containing compound to the first reactive precursor is about 2 to about 4.