Fabricating amorphous zinc oxide semiconductor layer

• US 8,222,076 B2
• Filed: 08/02/2006
• Issued: 07/17/2012
• Est. Priority Date: 08/02/2006
• Status: Active Grant

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Wu, Yiliang, Li, Yuning, Ong, Beng S.
• Primary Examiner(s): Reames, Matthew
• Assistant Examiner(s): ULLAH, ELIAS
• Application Number:
  US11/498,031
• Publication Number:
  US 20080032444A1
• Time in Patent Office: 2,176 Days
• Field of Search: 438/142, 438/201, 438/206, 438/209, 438/241
• US Class Current: 438/104
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.

Claims

1. A process for fabricating a semiconductor layer of an electronic device comprising:

(a) liquid depositing a first mixture comprising a zinc oxide precursor composition;

(b) heating the deposited first mixture to a maximum temperature of from about 20 degrees C. to below about 300 degrees C. to form predominately amorphous zinc oxide from the first mixture;

(c) cooling the deposited first mixture;

(d) liquid depositing a second mixture comprising a zinc oxide precursor composition upon the predominately amorphous zinc oxide formed from the first mixture;

(e) heating the deposited second mixture to a maximum temperature of from about 20 degrees C. to below about 300 degrees C. to form predominately amorphous zinc oxide from the second mixture; and

(f) cooling the deposited second mixture,

wherein the first mixture and the second mixture are different, to form at least one semiconductor layer of the electronic device.

2. The process of claim 1, wherein the first mixture comprises starting ingredients including a zinc compound and a liquid.

3. The process of claim 2, wherein the liquid is selected from the group consisting of water, methanol, ethanol, propanol, butanol, ethyleneglycol, methoxyethanol, ethoxyethanol, methoxypropanol, ethoxypropanol, methoxybutanol, dimethoxyglycol, N,N-dimethylformamide, and a mixture thereof.

4. The process of claim 2, wherein the zinc compound is selected from the group consisting of zinc acetylacetonate, zinc formate, zinc hexafluoroacetylacetonate, zinc lactate, zinc citrate, zinc oxalate, zinc nitrate, zinc acrylate, zinc methacrylate, their hydrate forms, and a mixture thereof.

5. The process of claim 1, wherein the first mixture is a single precursor composition consisting of zinc acetylacetonate hydrate and an alcohol.

6. The process of claim 1, wherein the electronic device comprises a plastic substrate.

7. A process for fabricating a semiconductor layer of an electronic device comprising:

(a) liquid depositing a zinc oxide precursor composition to result in a deposited composition;

(b) heating the deposited composition to a maximum temperature of from about 20 degrees C. to about 300 degrees C. to form a predominately amorphous zinc oxide sublayer; and

(c) cooling the heated deposited composition;

(d) liquid depositing the zinc oxide precursor composition upon the previously deposited predominately amorphous zinc oxide sublayer;

(e) heating the deposited composition to a maximum temperature of from about 20 degrees C. to about 300 degrees C. to form another predominately amorphous zinc oxide sublayer;

and (f) cooling the deposited composition;

wherein the steps (d), (e), and (f) are each accomplished a number of times in any effective arrangement, resulting in the formation of a semiconductor layer formed from multiple predominately amorphous zinc oxide sublayers;

wherein (d) and (e) are consecutively repeated in sequence from 1 to 9 times; and

wherein the zinc oxide precursor composition comprises a zinc compound selected from the group consisting of zinc hexafluoroacetylacetonate, zinc lactate, zinc citrate, zinc oxalate, zinc acrylate, zinc methacrylate, zinc sulfate, zinc sulfite, ethylenediaminetetraacetic acid zinc disodium salt, cobalt/barium/zinc octoate blends, zinc borate, zinc molybdate, zinc niobate, their hydrate forms, or a mixture thereof.

8. The process of claim 7, wherein the heating is accomplished at a maximum temperature from about 40 to about 200 degrees C.

9. The process of claim 7, wherein the electronic device is a thin film transistor.

10. The process of claim 7, wherein the zinc oxide precursor composition comprises starting ingredients including the zinc compound and a liquid.

11. The process of claim 10, wherein the liquid is selected from the group consisting of water, methanol, ethanol, propanol, butanol, ethyleneglycol, methoxyethanol, ethoxyethanol, methoxypropanol, ethoxypropanol, methoxybutanol, dimethoxyglycol, N,N-dimethylformamide, and a mixture thereof.

12. The process of claim 10, wherein the zinc compound is selected from the group consisting of zinc hexafluoroacetylacetonate, zinc lactate, zinc citrate, zinc oxalate, zinc acrylate, zinc methacrylate, their hydrate forms, and a mixture thereof.

13. The process of claim 7, wherein the heating comprises step-wise heating at several temperatures including a first temperature at above about 20 degrees C. to about 200 degrees C. and a different second temperature.

14. The process of claim 13, wherein the second temperature is accomplished by laser heating.

15. The process of claim 7, wherein the electronic device comprises a plastic substrate.