Semiconductor device and manufacturing method thereof

• US 8,222,092 B2
• Filed: 12/23/2009
• Issued: 07/17/2012
• Est. Priority Date: 12/26/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakata, Junichiro, Koyama, Jun
• Primary Examiner(s): Slutsker, Julia
• Application Number:
  US12/646,085
• Publication Number:
  US 20100163868A1
• Time in Patent Office: 937 Days
• Field of Search: 438/149, 438/158, 257/E21.691, 257/E21.411
• US Class Current: 438/149
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

Claims

1. A method for manufacturing a semiconductor device which includes a matrix circuit and a driver circuit configured to drive the matrix circuit over a substrate, comprising:

forming a metal film over the substrate in a matrix circuit region and a driver circuit region;

removing the metal film from the matrix circuit region by etching;

forming a first oxide semiconductor layer over the metal film in the driver circuit region and over the substrate in the matrix circuit region; and

forming a second oxide semiconductor layer by performing oxidation treatment on the metal film after forming the first oxide semiconductor layer,

wherein a first film transistor comprises a stack of the first oxide semiconductor layer and the second oxide semiconductor layer in the driver circuit region, and

wherein a second film transistor comprises a third oxide semiconductor layer in the matrix circuit region.

2. The method for manufacturing a semiconductor device, according to claim 1,

wherein the oxidation treatment is heat treatment which is performed in any one of an atmosphere containing oxygen, air, and a nitrogen atmosphere.

3. The method for manufacturing a semiconductor device, according to claim 1,

wherein the first oxide semiconductor layer contains at least one of indium, gallium, and zinc.

4. The method for manufacturing a semiconductor device, according to claim 1,

wherein the metal film contains at least one of indium, zinc, tin, molybdenum, and tungsten.

5. The method for manufacturing a semiconductor device, according to claim 1,

wherein at least one of elements which are contained in the second oxide semiconductor layer is the same as an element contained in the metal film.

6. The method for manufacturing a semiconductor device, according to claim 1,

wherein the metal film is formed by any one of a sputtering method, a vacuum vapor deposition method, and a coating method.

7. The method for manufacturing a semiconductor device, according to claim 1,

wherein a thickness of the first oxide semiconductor layer is 30 nm to 150 nm, inclusive.

8. The method for manufacturing a semiconductor device, according to claim 1,

wherein a thickness of the metal film is smaller than a thickness of the first oxide semiconductor layer.

9. The method for manufacturing a semiconductor device, according to claim 1,

wherein electrical resistivity of the second oxide semiconductor layer is lower than electrical resistivity of the first oxide semiconductor layer.

10. The method for manufacturing a semiconductor device, according to claim 1,

wherein the first oxide semiconductor layer comprises a first material,

wherein the second oxide semiconductor layer comprises a second material being different from the first material, and

wherein the third oxide semiconductor layer comprises the first material.

12. The method for manufacturing a semiconductor device, according to claim 1,

wherein the oxidation treatment is heat treatment which is performed in an oxygen containing atmosphere.

13. The method for manufacturing a semiconductor device, according to claim 1,

wherein the oxidation treatment is heat treatment which is performed in a nitrogen atmosphere.

14. The method for manufacturing a semiconductor device, according to claim 1,

wherein the metal film contains at least one of indium, zinc, tin, molybdenum, and tungsten.

15. The method for manufacturing a semiconductor device, according to claim 1,

wherein at least one of elements which are contained in the second oxide semiconductor layer is the same as an element contained in the metal film.

16. The method for manufacturing a semiconductor device, according to claim 1,

wherein the second thin film transistor is for a pixel matrix circuit and the first thin film transistor is for a driver circuit for driving the pixel matrix circuit.

17. The method for manufacturing a semiconductor device, according to claim 1,

wherein a thickness of the first oxide semiconductor layer is 30 nm to 150 nm, inclusive.

18. The method for manufacturing a semiconductor device, according to claim 1,

wherein a thickness of the metal film is smaller than a thickness of the first oxide semiconductor layer.

19. The method for manufacturing a semiconductor device, according to claim 1,

wherein electrical resistivity of the second oxide semiconductor layer is lower than electrical resistivity of the first oxide semiconductor layer.

20. The method for manufacturing a semiconductor device, according to claim 1,

wherein the first oxide semiconductor layer contains at least one of indium, gallium, and zinc.

11. A method for manufacturing a semiconductor device, comprising:

forming a metal film over a substrate in a first region of the substrate, wherein the metal film is on and in contact with an insulating surface over the substrate;

forming a first oxide semiconductor layer over the metal film in the first region and on and in contact with the insulating surface in a second region;

forming a second oxide semiconductor layer by performing oxidation treatment on the metal film after forming the first oxide semiconductor layer; and

patterning the first oxide semiconductor layer and the second oxide semiconductor layer to form at least a first patterned oxide semiconductor layer for a channel formation region of a first thin film transistor and a second patterned oxide semiconductor layer for a channel formation region of a second thin film transistor,

wherein the first patterned oxide semiconductor layer includes a stack of a portion of the first oxide semiconductor layer and a portion of the second oxide semiconductor layer, and

wherein the second patterned oxide semiconductor layer is a single layer of a portion of the first oxide semiconductor layer.

21. A method for manufacturing a semiconductor device, comprising:

forming a first gate electrode and a second gate electrode over a substrate;

forming an insulating film over the first gate electrode and the second gate electrode;

forming a metal film on the insulating film, wherein the metal film overlaps the first gate electrode while the metal film does not overlap the second gate electrode;

forming a first oxide semiconductor layer over the metal film over the first gate electrode and on and in contact with the insulating film over the second gate electrode;

forming a second oxide semiconductor layer by performing oxidation treatment on the metal film after forming the first oxide semiconductor layer; and

patterning the first oxide semiconductor layer and the second oxide semiconductor layer to form at least a first patterned oxide semiconductor layer over the first gate electrode for a channel formation region of a first thin film transistor and a second patterned oxide semiconductor layer over the second gate electrode for a channel formation region of a second thin film transistor,

wherein the first patterned oxide semiconductor layer includes a stack of a portion of the first oxide semiconductor layer and a portion of the second oxide semiconductor layer, and

wherein the second patterned oxide semiconductor layer is a single layer of a portion of the first oxide semiconductor layer.

22. The method for manufacturing a semiconductor device, according to claim 21,

wherein the oxidation treatment is heat treatment which is performed in an oxygen containing atmosphere.

23. The method for manufacturing a semiconductor device, according to claim 21,

wherein the oxidation treatment is heat treatment which is performed in a nitrogen atmosphere.

24. The method for manufacturing a semiconductor device, according to claim 21,

wherein the metal film contains at least one of indium, zinc, tin, molybdenum, and tungsten.

25. The method for manufacturing a semiconductor device, according to claim 21,

wherein at least one of elements which are contained in the second oxide semiconductor layer is the same as an element contained in the metal film.

26. The method for manufacturing a semiconductor device, according to claim 21,

wherein the second thin film transistor is for a pixel matrix circuit and the first thin film transistor is for a driver circuit for driving the pixel matrix circuit.

27. The method for manufacturing a semiconductor device, according to claim 21,

wherein a thickness of the first oxide semiconductor layer is 30 nm to 150 nm, inclusive.

28. The method for manufacturing a semiconductor device, according to claim 21,

wherein a thickness of the metal film is smaller than a thickness of the first oxide semiconductor layer.

29. The method for manufacturing a semiconductor device, according to claim 21,

wherein electrical resistivity of the second oxide semiconductor layer is lower than electrical resistivity of the first oxide semiconductor layer.

30. The method for manufacturing a semiconductor device, according to claim 21,

wherein the first oxide semiconductor layer contains at least one of indium, gallium, and zinc.