Semiconductor device having first and second source and drain electrodes sandwiched between an island-shaped semiconductor film
First Claim
1. A semiconductor device comprising:
- a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first source or drain electrode over the gate insulating film;
an island-shaped semiconductor film including a channel forming region over the first source or drain electrode and the gate insulating film; and
a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode,wherein a part of the second source or drain electrode is formed over and directly in contact with the first source or drain electrode,wherein the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode, andwherein the island-shaped semiconductor film is an inorganic semiconductor film including indium.
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Abstract
An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, a gate insulating film over the gate electrode, a first source or drain electrode over the gate insulating film, an island-shaped semiconductor film over the first source or drain electrode, and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode. Further, the second source or drain electrode is in contact with the first source or drain electrode, and the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. Moreover, the present invention relates to a manufacturing method of the semiconductor device.
78 Citations
24 Claims
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1. A semiconductor device comprising:
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a gate electrode over a substrate; a gate insulating film over the gate electrode; a first source or drain electrode over the gate insulating film; an island-shaped semiconductor film including a channel forming region over the first source or drain electrode and the gate insulating film; and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode, wherein a part of the second source or drain electrode is formed over and directly in contact with the first source or drain electrode, wherein the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode, and wherein the island-shaped semiconductor film is an inorganic semiconductor film including indium. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a gate electrode over a substrate; a gate insulating film over the gate electrode; a first source or drain electrode over the gate insulating film; an island-shaped semiconductor film including a channel forming region over the first source or drain electrode and the gate insulating film; an island-shaped impurity semiconductor film added with an impurity imparting one conductivity type over the island-shaped semiconductor film; and a second source or drain electrode over the island-shaped semiconductor film, the island-shaped impurity semiconductor film, and the first source or drain electrode, wherein a part of the second source or drain electrode is formed over and directly in contact with the first source or drain electrode, wherein the island-shaped semiconductor film and the island-shaped impurity semiconductor film are sandwiched between the first source or drain electrode and the second source or drain electrode, and wherein the island-shaped semiconductor film is an inorganic semiconductor film including indium. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A manufacturing method of a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming first source or drain electrode over the gate insulating film; forming an island-shaped semiconductor film including a channel forming region over the first source or drain electrode and the gate insulating film; and forming a second source or drain electrode over the first source or drain electrode and the island-shaped semiconductor film, wherein a part of the second source or drain electrode is formed over and directly in contact with the first source or drain electrode, wherein the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode, and wherein the island-shaped semiconductor film is an inorganic semiconductor film including indium. - View Dependent Claims (14, 15, 16)
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17. A manufacturing method of a semiconductor device comprising the steps of:
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forming a first conductive film over a substrate; forming a gate electrode using the first conductive film; forming a gate insulating film over the gate electrode; forming a second conductive film over the gate insulating film; forming a first source or drain electrode using the second conductive film; forming a semiconductor film over the first source or drain electrode; forming an island-shaped semiconductor film including a channel forming region by patterning the semiconductor film; forming a third conductive film over the first source or drain electrode and the island-shaped semiconductor film; and forming a second source or drain electrode by patterning the third conductive film, wherein a part of the second source or drain electrode is formed over and directly in contact with the first source or drain electrode, wherein the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode, and wherein the island-shaped semiconductor film is an inorganic semiconductor film including indium. - View Dependent Claims (18, 19, 20)
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21. A manufacturing method of a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first source or drain electrode over the gate insulating film; forming an island-shaped semiconductor film including a channel forming region over the first source or drain electrode and the gate insulating film; forming an island-shaped impurity semiconductor film added with an impurity imparting one conductivity type over the island-shaped semiconductor film; and forming a second source or drain electrode over the first source or drain electrode, the island-shaped semiconductor film, and the island-shaped impurity semiconductor film, wherein a part of the second source or drain electrode is formed over and directly in contact with the first source or drain electrode, wherein the island-shaped semiconductor film and the island-shaped impurity semiconductor film are sandwiched between the first source or drain electrode and the second source or drain electrode, wherein the island-shaped semiconductor film is an inorganic semiconductor film including indium. - View Dependent Claims (22, 23, 24)
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Specification