Nitride semiconductor heterostructures and related methods
First Claim
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1. A solid-state ultraviolet (UV) light-emitting device comprising:
- at least two layers each having a composition selected from the group consisting of AlN, GaN, InN, and any binary or tertiary alloy combination thereof; and
therebelow,a single-crystal AlN substrate having (i) a dislocation density of about 10,000 cm−
2 or less, (ii) a diameter greater than about 25 mm, and (iii) a top surface the entirety of which has substantially a single crystalline orientation.
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Abstract
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
220 Citations
27 Claims
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1. A solid-state ultraviolet (UV) light-emitting device comprising:
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at least two layers each having a composition selected from the group consisting of AlN, GaN, InN, and any binary or tertiary alloy combination thereof; and therebelow, a single-crystal AlN substrate having (i) a dislocation density of about 10,000 cm−
2 or less, (ii) a diameter greater than about 25 mm, and (iii) a top surface the entirety of which has substantially a single crystalline orientation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 21)
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15. A solid-state ultraviolet (UV) light-emitting diode comprising;
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at least two layers each having a composition selected from the group consisting of AlN, GaN, InN, and any binary or tertiary alloy combination thereof; thereunder, a single-crystal AlN substrate having a dislocation density of about 10,000 cm−
2 or less; anddisposed between the at least two layers and the single-crystal AlN substrate, an AlxGa1-xN graded layer having (i) a lattice parameter that varies over its thickness and (ii) thickness of less than 1 μ
m per 1% change in the lattice parameter,wherein the light-emitting diode converts a >
10% fraction of electric power into UV radiation power. - View Dependent Claims (17, 18, 19, 20, 22, 23, 24, 25, 26, 27)
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Specification