Semiconductor light-emitting element, method for manufacturing the semiconductor light-emitting element and lamp that uses the semiconductor light-emitting element

• US 8,222,667 B2
• Filed: 03/05/2009
• Issued: 07/17/2012
• Est. Priority Date: 03/06/2008
• Status: Expired due to Fees

• Current Assignee: Sumitomo Metal Mining Company Limited
• Original Assignee: Sumitomo Metal Mining Company Limited
• Inventors: Nakayama, Tokuyuki, Abe, Yoshiyuki
• Primary Examiner(s): Louie, Wai Sing
• Assistant Examiner(s): Jahan, Bilkis
• Application Number:
  US12/920,949
• Publication Number:
  US 20110062485A1
• Time in Patent Office: 1,230 Days
• Field of Search: 257/98, 257/99, 257/100
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element.

The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.

Claims

1. A semiconductor light-emitting element, comprising:

a compound semiconductor layer that includes at least a p-type semiconductor layer; and

a transparent electrode that is provided on the p-type semiconductor layer;

wherein

the transparent electrode is formed from a transparent conductive film comprising an oxide of indium and gallium, and

wherein the amount of gallium contained in the transparent conductive film is at a Ga/(In+Ga) atomic ratio of between about 0.10 and about 0.35.

2. The semiconductor light-emitting element according to claim 1, wherein the transparent conductive film is amorphous.

3. The semiconductor light-emitting element according to claim 1, wherein the compound semiconductor layer has a light-emitting wavelength in at least the range of between about 350 nm to about 500 nm.

4. The semiconductor light-emitting element according to claim 1, wherein the compound semiconductor layer is a gallium nitride semiconductor layer.

5. The semiconductor light-emitting element according to claim 1, wherein the transparent conductive film has transmittance of 85% or greater in the wavelength range near 450 nm.

6. The semiconductor light-emitting element according to claim 1, wherein the transparent conductive film has transmittance of 80% or greater in the wavelength range near 400 nm.

7. The semiconductor light-emitting element according to claim 1, wherein the surface resistance of the transparent conductive film is 20Ω

/□

or less.

8. The semiconductor light-emitting element according to claim 1, wherein the thickness of the transparent conductive film is 10 nm to 1000 nm.

9. The semiconductor light-emitting element according to claim 1, wherein a protective layer is formed on the transparent electrode.

10. A semiconductor light-emitting element, comprising:

a compound semiconductor layer that includes at least a p-type semiconductor layer; and

a transparent electrode that is provided on the p-type semiconductor layer;

wherein the transparent electrode is made from a transparent conductive film comprising an oxide of indium, gallium and tin;

wherein the amount of gallium contained in said transparent conductive film is at a Ga/(In+Ga+Sn) atomic ratio of between about 0.02 and about 0.30, and the amount of tin contained is at a Sn/(In+Ga+Sn) atomic ratio of between about 0.01 and about 0.11; and

the transparent conductive film is crystallized.