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Semiconductor light emitting device

  • US 8,227,280 B2
  • Filed: 06/30/2010
  • Issued: 07/24/2012
  • Est. Priority Date: 07/24/2001
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor light emitting device comprising a substrate, a plurality of GaN-based semiconductor layers formed on the substrate and an ohmic electrode formed on the GaN-based semiconductor layers so that light generated in the GaN-based semiconductor layers is emitted from the ohmic electrode or the substrate, the method comprising:

  • providing a C plane (0001) sapphire substrate;

    forming a plurality of protrusions on a primary surface of the sapphire substrate in a two-dimensionally repeated pattern so that the protrusions stand on a base flat portion of the sapphire substrate and have top portions that are higher than the base flat portion;

    growing epitaxially from the top portions of the protrusions and the base flat portion of the sapphire substrate a GaN based semiconductor layer so as to cover the protrusions; and

    forming an ohmic electrode over the GaN-based semiconductor layer,wherein in plan view of the sapphire substrate the GaN-based semiconductor layer grows in a shape of a hexagon defined by A-axis of the GaN-based semiconductor layer on the top portions of the protrusions, andin plan view of the sapphire substrate the GaN-based semiconductor layer grows with a growing face that is not parallel to A-axis of the GaN-based semiconductor layer on the base flat portion of the sapphire substrate.

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