Semiconductor device
First Claim
1. A semiconductor device comprising:
- a field effect transistor having a channel region formed in a single crystal semiconductor substrate; and
a memory circuit provided above the field effect transistor, wherein said memory circuit comprises;
a first conductive layer,an organic compound layer over the first conductive layer, anda second conductive layer formed over the organic compound layer,wherein the organic compound layer comprises a conjugated polymer doped with a compound which generates acid by absorbing light.
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Abstract
It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.
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Citations
33 Claims
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1. A semiconductor device comprising:
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a field effect transistor having a channel region formed in a single crystal semiconductor substrate; and a memory circuit provided above the field effect transistor, wherein said memory circuit comprises; a first conductive layer, an organic compound layer over the first conductive layer, and a second conductive layer formed over the organic compound layer, wherein the organic compound layer comprises a conjugated polymer doped with a compound which generates acid by absorbing light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a field effect transistor having a channel region formed in a single crystal semiconductor substrate; a memory circuit provided above the field effect transistor, wherein said memory circuit comprises; a first conductive layer, an organic compound layer over the first conductive layer, and a second conductive layer formed over the organic compound layer; and a third conductive layer serving as an antenna, and wherein the third conductive layer serving as the antenna and the first conductive layer are provided in a same layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor device comprising:
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a field effect transistor having a channel region formed in a single crystal semiconductor substrate; a memory circuit provided above the field effect transistor, wherein said memory circuit comprises; a first conductive layer, an organic compound layer over the first conductive layer, and a second conductive layer formed over the organic compound layer; and a third conductive layer serving as an antenna, wherein the third conductive layer serving as the antenna is electrically connected to the field effect transistor. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification