Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same

• US 8,227,855 B2
• Filed: 02/09/2009
• Issued: 07/24/2012
• Est. Priority Date: 02/09/2009
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Yedinak, Joseph, Rinehimer, Mark, Grebs, Thomas E., Benjamin, John
• Primary Examiner(s): ARMAND, MARC ANTHONY
• Application Number:
  US12/368,210
• Publication Number:
  US 20100200910A1
• Time in Patent Office: 1,261 Days
• Field of Search: 257/328, 257/623, 257/476, 257/E29.262, 257/E21.41, 257/475, 257/471, 257/480, 257/482, 257/656, 257/330, 257/333, 257/329, 438/589
• US Class Current: 257/328
• CPC Class Codes: H01L 29/0626 with a localised breakdown region, e.g. built-in avalanching region in self-protected thyristors H01L29/7424
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/66143 Schottky diodes
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]

Abstract

Disclosed are semiconductor devices with breakdown voltages that are more controlled and stable after repeated exposure to breakdown conditions than prior art devices. The disclosed devices can be used to provide secondary circuit functions not previously contemplated by the prior art.

Claims

1. A semiconductor device, comprising:

a semiconductor layer of a first conductivity type having a first surface, a second surface, and a mesa region, the mesa region having a top surface adjacent to the layer'"'"'s first surface, a width, and a net doping concentration of the first conductivity type in a center portion of the mesa region;

an electrically insulated electrode disposed in the semiconductor layer and adjacent to the mesa region, the electrically insulated electrode extending from the layer'"'"'s first surface toward the layer'"'"'s second surface, and having at least one side wall and a bottom wall;

a second electrode disposed adjacent to the top surface of the mesa region;

a third electrode electrically coupled to the semiconductor layer; and

wherein a product of the width and the net doping concentration in the center portion of the mesa region is equal to or less than 2.4×

10¹² cm<sup>−

2</sup>.

2. The semiconductor device of claim 1 wherein the product of the width and the net doping concentration in the center portion of the mesa region is equal to or less than 1.2×

10¹² cm<sup>−

2</sup>.

3. The semiconductor device of claim 1 wherein the net doping concentration in the center portion of the mesa region is equal to or less 8×

10¹⁶ cm<sup>−

3</sup>.

4. The semiconductor device of claim 1 wherein the first conductivity type is n-type.

5. The semiconductor device of claim 1 wherein the electrically insulated electrode comprises a central conductive body and an outer electrically insulating layer disposed on the central conductive body.

6. The semiconductor device of claim 1 wherein the second electrode is disposed to provide a Schottky diode with the mesa region, and wherein the second electrode is electrically coupled to the electrically insulated electrode.

7. The semiconductor device of claim 1 wherein the width of the mesa region is equal to or less than 0.4 microns.

8. The semiconductor device of claim 1, wherein the electrically insulated electrode comprises an electrically-conductive electrode having at least one side wall that is uniformly spaced from the mesa region along its at least one side wall.

9. The semiconductor device of claim 5 wherein the outer electrically insulating layer comprises silicon dioxide and the central conductive body comprises polysilicon.

10. A semiconductor device, comprising:

a semiconductor layer of a first conductivity type having a first surface, a second surface, a mesa region, and a first net doping concentration of the first conductivity type in a center portion of the mesa region, the mesa region having a top surface adjacent to the layer'"'"'s first surface;

an electrically insulated electrode disposed in the semiconductor layer and adjacent to the mesa region, the electrically insulated electrode extending from the layer'"'"'s first surface toward the layer'"'"'s second surface, and having at least one side wall and a bottom wall;

a second electrode disposed adjacent to the top surface of the mesa region;

a third electrode electrically coupled to the semiconductor layer; and

an enhanced doping region disposed in the semiconductor layer having a second net doping concentration of the first conductivity type that is greater than the first net doping concentration of the first conductivity type, the enhanced doping region being disposed adjacent to the bottom wall of the electrically insulated electrode.

11. The semiconductor device of claim 10 wherein the semiconductor layer comprises silicon.

12. The semiconductor device of claim 10 wherein the electrically insulated electrode comprises a central conductive body and an outer electrically insulating layer disposed on the central conductive body.

13. The semiconductor device of claim 10 wherein the second electrode is disposed to provide a Schottky diode with the mesa region.

14. The semiconductor device of claim 10 wherein the second net doping concentration is greater than the first net doping concentration by at least an amount of 2×

10¹⁶ cm<sup>−

3</sup>.

15. The semiconductor device of claim 10 wherein the enhanced doping region extends from the bottom wall of the electrically insulated electrode toward the second surface of the semiconductor layer to a point that is 0.1 microns to 2 microns from the bottom wall.

16. The semiconductor device of claim 10 wherein the mesa region has a width that is equal to or less than 0.6 microns.

17. The semiconductor device of claim 10 wherein the mesa region has a width that is equal to or less than 0.4 microns.

18. The semiconductor device of claim 10 wherein the mesa region has a width, and wherein a product of the width and the first net doping concentration is equal to or less than 2.4×

10¹² cm<sup>−

2</sup>.

19. The semiconductor device of claim 10 wherein the net doping concentration in the center portion of the mesa region is equal to or less than 8×

10¹⁶ cm<sup>−

3</sup>.

20. The semiconductor device of claim 10 wherein the first conductivity type is n-type.

21. The semiconductor device of claim 10, wherein the electrically insulated electrode comprises an electrically-conductive electrode having at least one side wall that is uniformly spaced from the mesa region along its at least one side wall.

22. The semiconductor device of claim 10, wherein a portion of the enhanced doping region having the second net doping concentration of the first conductivity type abuts a portion of the semiconductor layer having the first net doping concentration of the first conductivity type.

23. The semiconductor device of claim 12 wherein the electrically insulating layer comprises silicon dioxide.

24. The semiconductor device of claim 12 wherein the central conductive body comprises polysilicon.

25. The semiconductor device of claim 18 wherein the product of the width and the first net doping concentration in the center portion of the mesa region is equal to or less than 1.2×

10¹² cm<sup>−

2</sup>.

26. The semiconductor device of claim 13 wherein the second electrode is electrically coupled to the electrically insulated electrode.

27. A method of manufacturing a semiconductor device, the method comprising:

forming one or more trenches into a semiconductor layer of a first conductivity type to define a mesa region having a width, the semiconductor layer having a first surface and a second surface, the mesa region having a top surface adjacent to the layer'"'"'s first surface and a net dopant concentration of a first conductivity type in a center portion of the mesa region, a product of the width and the net dopant concentration being equal to or less than 2.4×

10¹² cm<sup>−

2</sup>;

forming a dielectric layer on the side and bottom walls of the one or more trenches;

filling the one or more trenches with conductive material to form an electrically insulated electrode disposed in the semiconductor layer and adjacent to the mesa region, the electrically insulated electrode extending from the layer'"'"'s first surface toward the layer'"'"'s second surface, and having at least one side wall and a bottom wall;

forming a second electrode that is disposed adjacent to the top surface of the mesa region; and

forming a third electrode electrically coupled to the semiconductor layer.

28. The method of claim 27 wherein the net dopant concentration of the first conductivity type is equal to or less than 8×

10¹⁶ cm<sup>−

3</sup>.

29. The method of claim 27 wherein the width of the mesa region is equal to or less than 0.4 microns.

30. The method of claim 27 wherein forming the one or more trenches comprises:

disposing an etch mask over the semiconductor layer to protect a location for the mesa region and to leave one or more exposed portions of the semiconductor layer;

etching the one or more exposed portions of the semiconductor layer to form one or more initial trenches, the one or more initial trenches having a plurality of surfaces, the etching comprising an anisotropic etching process;

growing a sacrificial oxide on the surfaces of the one or more initial trenches; and

removing the sacrificial oxide.

31. A method of manufacturing a semiconductor device, the method comprising:

forming one or more trenches into a semiconductor layer of a first conductivity type to define a mesa region having a width, the semiconductor layer having a first surface, a second surface, and a first net concentration of the first conductivity type in a center portion of the mesa region, the mesa region having a top surface adjacent to the layer'"'"'s first surface, each trench having a bottom wall and one or more side walls;

implanting a dopant of the first conductivity type into the semiconductor layer at a location of a bottom wall of at least one trench to form an enhanced doping region disposed in the semiconductor layer having a second net doping concentration of the first conductivity type that is greater than the first net doping concentration of the first conductivity type;

forming a dielectric layer on the side and bottom walls of the one or more trenches;

filling the one or more trenches with electrically conductive material to form at least one electrically insulated electrode disposed in the semiconductor layer and adjacent to the mesa region, the at least one electrically insulated electrode extending from the layer'"'"'s first surface toward the layer'"'"'s second surface, and having at least one side wall and a bottom wall, the enhanced doping region being disposed adjacent to the bottom wall of the at least one electrically insulated electrode;

forming a second electrode that is disposed adjacent to the top surface of the mesa region; and

forming a third electrode electrically coupled to the semiconductor layer.

32. The method of claim 31 further comprising:

after implanting the dopant, growing a sacrificial oxide on the walls of the one or more trenches; and

removing the sacrificial oxide before forming the dielectric layer.

33. The method of claim 31 further comprising:

growing a sacrificial oxide on the walls of the one or more trenches before implanting the dopant; and

removing the sacrificial oxide after implanting the dopant.

34. The method of claim 31 wherein forming the one or more trenches comprises:

disposing an etch mask over the semiconductor layer to protect a location for the mesa region and to leave one or more exposed portions of the semiconductor layer;

etching the one or more exposed portions of the semiconductor layer to form one or more initial trenches having a plurality of walls, the etching comprising an anisotropic etching process; and

exposing the walls of the initial trenches to an isotropic etchant.

35. The method of claim 31 wherein a product of the width of the mesa region and the first net dopant concentration is equal to or less than 2.4×

10¹² cm<sup>−

2</sup>.