Single crystal silicon sensor with additional layer and method of producing the same

• US 8,227,876 B2
• Filed: 06/02/2006
• Issued: 07/24/2012
• Est. Priority Date: 03/02/2004
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Nunan, Thomas Kieran, Brosnihan, Timothy J.
• Primary Examiner(s): SMITH, BRADLEY
• Application Number:
  US11/445,549
• Publication Number:
  US 20060214248A1
• Time in Patent Office: 2,244 Days
• Field of Search: 257/415, 257/419
• US Class Current: 257/414
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up

Abstract

A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.

Claims

1. A MEMS inertial sensor comprising:

a single crystal silicon layer having a top surface, the single crystal silicon layer also having sensing structure and a second component, the second component being within the single crystal silicon layer and including circuitry; and

a deposited additional layer adjacent to the top surface of the single crystal silicon layer, the deposited additional layer having a portion that is spaced from the top surface and having a face that faces the top surface and the sensing structure, the deposited additional layer being conductive to serve as an interconnect for the sensing structure on the single crystal silicon layer, the deposited additional layer electrically connecting the sensing structure with the circuitry and forming an electrode capable of capacitively coupling with at least a portion of the single crystal silicon layer and measuring a change of capacitance between the sensing structure and the deposited additional layer, the change of capacitance being based, at least in part, upon a change in distance between the sensing structure and the face of the deposited additional layer.

2. The MEMS inertial sensor as defined by claim 1 wherein the deposited additional layer has a portion that contacts the top surface.

3. The MEMS inertial sensor as defined by claim 1 wherein the single crystal silicon layer is a part of a silicon-on-insulator wafer, the sensor further including a base layer and an insulator layer separating the base layer and the single crystal silicon layer.

4. The MEMS inertial sensor as defined by claim 1 wherein the single crystal silicon layer is a bulk silicon wafer.

5. The MEMS inertial sensor as defined by claim 1 wherein at least an air space separates the top surface from the deposited additional layer.

6. The MEMS inertial sensor as defined by claim 1, wherein the deposited additional layer is immediately adjacent to the top surface of the single crystal silicon layer.

7. The MEMS inertial sensor as defined by claim 1, wherein only an air gap separates the sensing component and the face of the deposited additional layer.