Multi-track integrated circuit inductor

• US 8,227,892 B2
• Filed: 03/25/2010
• Issued: 07/24/2012
• Est. Priority Date: 11/12/1998
• Status: Expired due to Fees

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Broadcom Corporation (Broadcom, Inc.)
• Inventors: Chang, James Y. C.
• Primary Examiner(s): Nguyen, Ha Tran T
• Assistant Examiner(s): Tran, Thanh Y
• Application Number:
  US12/731,828
• Publication Number:
  US 20100245012A1
• Time in Patent Office: 852 Days
• Field of Search: 257/531, 257/508, 257/758, 257/774, 257/776, 257/528, 257/659, 257/660, 257/409, 257/168, 257/170, 257/484, 257/605, 438/381, 438/238, 438/329, 438/901, 438/614, 438/622, 438/620, 438/637, 438/652
• US Class Current: 257/531
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2017/0053 with means to reduce eddy currents
• CPC Class Codes: H01F 2021/125 Printed variable inductor with taps, e.g. for VCO
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H03B 5/364 the amplifier comprising field effect transistors H03B5/366 takes precedence
• CPC Class Codes: H03D 7/161 all the frequency changers being connected in cascade
• CPC Class Codes: H03D 7/18 Modifications of frequency-changers for eliminating image frequencies H03D7/16 takes precedence
• CPC Class Codes: H03G 1/0029 using FETs
• CPC Class Codes: H03H 11/1291 Current or voltage controlled filters
• CPC Class Codes: H03J 1/0075 where the receiving frequencies of the stations are stored in a permanent memory, e.g. ROM
• CPC Class Codes: H03J 2200/10 Tuning of a resonator by means of digitally controlled capacitor bank
• CPC Class Codes: H03J 3/04 Arrangements for compensating for variations of physical values, e.g. temperature
• CPC Class Codes: H03J 3/08 by varying a second parameter simultaneously with the tuning, e.g. coupling bandpass filter
• CPC Class Codes: H03J 3/185 with varactors, i.e. voltage variable reactive diodes
• CPC Class Codes: H03L 7/103 : the additional signal being a digital signal
• CPC Class Codes: H03L 7/23 : with pulse counters or frequency dividers

Abstract

An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programmable attenuation and a programmable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters utilize multi track spiral inductors with shields to increase circuit Q. The filters are tuned using local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range. A differential crystal oscillator is advantageously used as a frequency reference. Differential signal transmission is advantageously used throughout the receiver. ESD protection is provided by a pad ring and ESD clamping structure that maintains signal integrity. Also provided are shunts at each pin to discharge ESD build up. The shunts utilize a gate boosting structure to provide sufficient small signal RF performance, and minimal parasitic loading.

Claims

1. An integrated circuit inductor, comprising:

a substrate;

an inductor metallization pattern in contact with the substrate and having a planar inductor topology including a layer of multiple tracks side-by-side separated by a gap,

wherein starting points of the multiple tracks of the layer are joined together side-by-side and ending points of the multiple tracks of the layer are joined together side-by-side; and

a shield formed within the substrate, the shield including a plurality of diffusion layers interdigitated with a plurality of second gaps, the plurality of diffusion layers being configured and arranged to form a plurality of fingered patterns, wherein

the plurality of fingered patterns are connected together using a ring of conductive material, the ring of conductive material including a cut, the cut being configured to cause a current to flow around the ring of conductive material in one direction to a single ground point.

2. The integrated circuit inductor of claim 1, wherein the planar inductor topology includes a pattern corresponding to at least one of:

rectangular, octagonal, square, and circular.

3. The integrated circuit inductor of claim 2, wherein the planar inductor topology includes a spiral having at least one turn.

4. The integrated circuit inductor of claim 1, wherein the integrated circuit inductor comprises:

multiple layers separated from each other vertically.

5. The integrated circuit inductor of claim 4, wherein the multiple layers include multiple different planar inductor topologies.

6. The integrated circuit inductor of claim 4, further comprising:

an access layer including a pass through track configured to provide access to an end of an inner turn of the access layer.

7. The integrated circuit inductor of claim 4, further comprising:

a via joining at least two of the multiple layers.

8. The integrated circuit inductor of claim 7, further comprising:

multiple vias associated with the multiple layers.

9. The integrated circuit inductor of claim 8, wherein the multiple vias connect the multiple layers vertically to thereby increase a conductor thickness and decrease a series resistance loss associated with a track.

10. The integrated circuit inductor of claim 8, wherein the multiple vias are arranged along a length of the multiple tracks associated with the multiple layers.

11. The integrated circuit inductor of claim 10, wherein the multiple vias couple the multiple layers in as many places along the length of the multiple tracks as possible.

12. The integrated circuit inductor of claim 1, wherein the gap is minimized according to a production process of the integrated circuit inductor.

13. The integrated circuit inductor of claim 1, wherein the substrate comprises:

a shield disposed beneath the inductor metallization pattern.

14. The integrated circuit inductor of claim 13, wherein the shield is patterned.

15. The integrated circuit inductor of claim 13, wherein the shield is connected to ground.

16. The integrated circuit inductor of claim 1, wherein the plurality of diffusion layers comprise:

a plurality of n+ diffusion layers.

17. The integrated circuit inductor of claim 1, wherein the plurality of diffusion layers are configured and arranged to form a plurality of fingered patterns.

18. The integrated circuit inductor of claim 1, wherein the plurality of second gaps are filled with polysilicon material.

19. The integrated circuit inductor of claim 1, wherein a first and a second diffusion layer from among the plurality of diffusion layers are connected together to form a first group and a third and a fourth diffusion layer from among the plurality of diffusion layers are coupled connected together to form a second group, the first and the second groups being connected to a single ground point.

20. The integrated circuit inductor of claim 1, wherein an end of the first diffusion layer is coupled to an end of the second diffusion layer by a first conductive strip of metal, wherein an end of the third diffusion layer is coupled to an end of the fourth diffusion layer by a second conductive strip of metal, and wherein the first and the second conductive strip of metal being connected to the single ground point.

21. A shield formed within a substrate including a layer of multiple tracks, comprising:

a plurality of diffusion layers interdigitated with a plurality of gaps, the plurality of diffusion layers being configured and arranged to form a plurality of fingered patterns, wherein

the plurality of fingered patterns are connected together using a ring of conductive material, the ring of conductive material including a cut, the cut being configured to cause a current to flow around the ring of conductive material in one direction to a single ground point.