Semiconductor memory devices that are resistant to power attacks and methods of operating semiconductor memory devices that are resistant to power attacks

• US 8,230,234 B2
• Filed: 08/05/2008
• Issued: 07/24/2012
• Est. Priority Date: 08/06/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Yoon, Joong Chul, Seo, Gae Won, Derouet, Odile
• Primary Examiner(s): Barron, Jr., Gilberto
• Assistant Examiner(s): Okeke, Izunna
• Application Number:
  US12/221,578
• Publication Number:
  US 20090043969A1
• Time in Patent Office: 1,449 Days
• Field of Search: 713/189, 713/190, 713/192, 713/193, 713/194, 713/164, 380/207, 380/209, 380/252, 380/42
• US Class Current: 713/190
• CPC Class Codes: G06F 12/1408 by using cryptography for digital transmission H04L9/00
• CPC Class Codes: G06F 21/755 with measures against power attack
• CPC Class Codes: G06F 21/79 in semiconductor storage media, e.g. directly-addressable memories
• CPC Class Codes: G06F 21/85 interconnection devices, e.g. bus-connected or in-line devices
• CPC Class Codes: G06F 2221/2153 Using hardware token as a secondary aspect
• CPC Class Codes: Y02D 10/00 Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

A semiconductor memory device according to some embodiments includes a random converter that receives data and address information including a start address value and an end address value of the address from a central processing unit (CPU), generates and stores at least one random number for each address value from the start address value to the end address value, performs a logical operation on the random number and the data corresponding to the address, and responsively generates randomized data to be stored in memory. Accordingly, the semiconductor memory device randomizes a power consumption signature that can occur when data is stored, thereby writing and reading data in a manner that is resistant to a power attack.

Claims

1. A semiconductor memory device, comprising:

a central processing unit configured to output an address through an address line and data through a data line;

a random converter coupled to the data line and configured to receive the data, to convert the data to randomized data, and to output the randomized data; and

a memory unit configured to receive the address through the address line and store the randomized data at the address;

wherein the random converter is configured to receive address information including a start address value and an end address value associated with the data, to generate and store a random number associated with each value from the start address value to the end address value of the address based on the address information, to perform a logical operation on the random number and data corresponding to the address to thereby generate the randomized data, and to output the randomized data.

2. The semiconductor memory device of claim 1, wherein the random converter is further configured to receive flag information from the central processing unit and to decide whether to update the start and end address values and the random number corresponding to each of the values from the start address value to the end address value in response to the flag information.

3. The semiconductor memory device of claim 1, wherein the random converter is further configured to read the randomized data from the memory unit, to perform the logical operation on the randomized data and the random number corresponding to the address of the data, and to send the data resulting from the logical operation to the central processing unit.

4. The semiconductor memory device of claim 1, wherein the random converter comprises:

a controller configured to receive the address information and flag information from the central processing unit and to generate an address setting command, a flag setting command, and a random number selection signal;

a random number generation unit configured to generate the random number;

an output unit configured to select the random number in response to the random number selection signal, to perform the logical operation on the selected random number and the data to generate the randomized data, and to output the randomized data; and

a random number table configured to store the start address value and the end address value in response to the address setting command, to allocate the random number selected by the output unit to each of the values from the start address value to the end address value, and to store the random number in response to the flag setting command.

5. The semiconductor memory device of claim 4, wherein the random number generation unit comprises:

a random number generator configured to generate the random number; and

a register configured to store the random number.

6. The semiconductor memory device of claim 4, wherein the output unit comprises:

a multiplexer configured to select the random number generated by the random number generation unit and/or the random number stored in the random number table in response to the random number selection signal; and

a logical operation unit configured to perform the logical operation on the random number output from the multiplexer and the data to thereby generate the randomized data, and to output the randomized data.

7. The semiconductor memory device of claim 6, further comprising a switch disposed between the multiplexer and the logical operation unit, wherein the switch is configured to transmit the random number selected by the multiplexer to the logical operation unit in response to a switch control signal generated by the controller.

8. The semiconductor memory device of claim 4, wherein the memory unit and/or the random number table comprises a non-volatile memory device.

9. The semiconductor memory device of claim 1, wherein the logical operation comprises an XOR operation.

10. The semiconductor memory device of claim 1, wherein the semiconductor memory device comprises a memory card.

11. A method of writing data in a memory device, comprising:

outputting an address through an address line and data through a data line;

generating randomized data in response to the data and the address by receiving address information including a start address value and an end address value, generating and storing at least one random number for each value from the start address value to the end address value of the address in response to the address information, and performing a logical operation on the random number and data corresponding to the address; and

storing the randomized data at the address.

12. The method of claim 11, wherein generating the randomized data comprises receiving flag information and deciding whether to update the start and end address values and the random number corresponding to each of the values from the start address value to the end address value in response to the flag information.

13. The method of claim 11, wherein generating the randomized data comprises:

receiving the address information and flag information and responsively generating an address setting command, a flag setting command, and a random number selection signal;

selecting a random number from the generated random numbers in response to the random number selection signal, and performing the logical operation on selected random number and the data corresponding to the address to generate the randomized data, and outputting the randomized data; and

storing the start address value and the end address value in response to the address setting command, and allocating the selected random number to each of the values from the start address value to the end address value and storing the selected random number in response to the flag setting command.

14. The data writing method of claim 11, wherein the logical operation comprises an XOR operation.

15. A method of reading stored data in a semiconductor memory device, comprising:

outputting randomized data corresponding to an address value received through an address line; and

performing a logical operation on a random number corresponding to the address value and the randomized data to responsively generate original data, outputting the original data, and updating flag information;

wherein the flag information indicates whether to store a new address and/or a new random number in a random number table in which the address value and the random number are stored, during a subsequent write operation of the semiconductor memory device.

16. The data reading method of claim 15, wherein the logical operation comprises an XOR operation.