Method for manufacturing and testing an integrated electronic circuit
First Claim
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1. A method for manufacturing and for testing an integrated circuit, comprising the steps of:
- forming, on the upper portion of the integrated circuit, a passivation layer comprising openings at the level of metal tracks of an interconnect stack of the integrated circuit;
forming, in the openings, first pads connected to second pads formed on the passivation layer by conductive track sections, the first pads being intended for the connection of the integrated circuit;
testing the integrated circuit by bringing test tips in contact with the second pads;
depositing a multiple-layer conductive stack, for connection with conductive bumps, on the upper portion of the intergrated circuit; and
etching the multiple-layer stack, except above the first pads, said track sections being of a material such that said etching also removes said track sections, whereby the first and second pads are disconnected, and wherein etching disconnects the second pads from the intergrated circuit.
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Abstract
A method for manufacturing and for testing an integrated circuit, including the steps of forming, on the upper portion of the integrated circuit, a passivation layer including openings at the level of metal tracks of the last interconnect stack of the integrated circuit; forming, in the openings, first pads connected to second pads formed on the passivation layer by conductive track sections, the first pads being intended for the connection of the integrated circuit; testing the integrated circuit by bringing test tips in contact with the second pads; and eliminating at least a portion of at least one of the conductive track sections.
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Citations
19 Claims
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1. A method for manufacturing and for testing an integrated circuit, comprising the steps of:
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forming, on the upper portion of the integrated circuit, a passivation layer comprising openings at the level of metal tracks of an interconnect stack of the integrated circuit; forming, in the openings, first pads connected to second pads formed on the passivation layer by conductive track sections, the first pads being intended for the connection of the integrated circuit; testing the integrated circuit by bringing test tips in contact with the second pads; depositing a multiple-layer conductive stack, for connection with conductive bumps, on the upper portion of the intergrated circuit; and etching the multiple-layer stack, except above the first pads, said track sections being of a material such that said etching also removes said track sections, whereby the first and second pads are disconnected, and wherein etching disconnects the second pads from the intergrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing an integrated circuit comprising:
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forming a connection pad disposed on the integrated circuit and connected with a metal track formed in the integrated circuit; forming a test pad disposed on the integrated circuit; forming a conductive track section disposed on the integrated circuit and connecting the connection and test pads; and etching the integrated circuit, wherein etching the integrated circuit removes the conductive track section, wherein removing the conductive track section disconnects the test pad and the integrated circuit. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A method for manufacturing and testing of an integrated circuit comprising:
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forming a passivation layer on an upper portion of the integrated circuit with an opening located above and at a level of a metal track formed in the integrated circuit; forming a first pad in the at least one opening, a second pad on the passivation layer, and a conductive track section connecting the first and second pads; bringing a testing tip into contact with the second pad; depositing a multiple-layer conductive stack on the upper portion of the integrated circuit; and etching the multiple-layer conductive stack, except above the first pad, wherein said etching also removes said conductive track section, wherein said etching disconnects the second pad and the integrated circuit.
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Specification