Process for chip capacitive coupling
First Claim
1. A method comprising:
- providing a contact on a first surface of a semiconductor material;
creating a via that extends from a second surface of the semiconductor material through a portion of the semiconductor material, wherein the via has a depth sufficient to bring the via into proximity with, but physically spaced apart from, the contact; and
introducing an electrically-conductive material into the via, wherein the contact and the electrically-conductive material are spaced sufficiently apart such that a signal may capacitively propagate between the contact and the electrically-conductive material, and wherein there is no direct electrical connection between the contact and the electrically-conductive material.
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Accused Products
Abstract
A method of creating a semiconductor chip having a substrate, a doped semiconductor material abutting the substrate and a device pad at an outer side of the doped semiconductor material involves creating a via through at least a portion of the substrate, the via having a periphery and a bottom at a location and depth sufficient to bring the via into proximity with the device pad but be physically spaced apart from the device pad, introducing an electrically conductive material into the via, and connecting the electrically conductive material to a signal source so the signal will deliberately be propagated from the electrically conductive material to the device pad without any direct electrical connection existing between the electrically conductive material and the device pad.
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Citations
27 Claims
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1. A method comprising:
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providing a contact on a first surface of a semiconductor material; creating a via that extends from a second surface of the semiconductor material through a portion of the semiconductor material, wherein the via has a depth sufficient to bring the via into proximity with, but physically spaced apart from, the contact; and introducing an electrically-conductive material into the via, wherein the contact and the electrically-conductive material are spaced sufficiently apart such that a signal may capacitively propagate between the contact and the electrically-conductive material, and wherein there is no direct electrical connection between the contact and the electrically-conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method comprising:
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providing a first contact on a first surface of a first semiconductor material of a first semiconductor chip; creating a via that extends from a second surface of the first semiconductor material through a portion of the first semiconductor material; introducing a first electrically-conductive material into the via, wherein the first contact and the first electrically-conductive material are not in direct electrical contact and are spaced sufficiently apart such that a signal may capacitively propagate between the first contact and the first electrically-conductive material; stacking a second semiconductor chip on the first semiconductor chip, wherein the second semiconductor chip includes a second contact; and electrically connecting the second contact to the first electrically-conductive material. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification