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Schemes for forming barrier layers for copper in interconnect structures

  • US 8,232,201 B2
  • Filed: 05/25/2011
  • Issued: 07/31/2012
  • Est. Priority Date: 11/21/2006
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, the method comprising:

  • providing a substrate;

    forming a low-k dielectric layer over the substrate;

    forming an opening extending from a top surface of the low-k dielectric layer into the low-k dielectric layer;

    forming a first barrier layer lining the opening;

    embedding a conductive wiring in a remaining portion of the opening;

    recessing a top edge of the first barrier layer to form a recess, wherein portions of sidewalls of the conductive wiring are exposed; and

    forming a second barrier layer covering a top surface and exposed sidewalls of the conductive wiring, wherein the second barrier layer does not extend over the low-k dielectric layer.

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