Channel layers and semiconductor devices including the same
First Claim
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1. A semiconductor device, comprising:
- a multi-layer channel including at least a first layer and a second layer which have different carrier mobilities and formed of different oxide materials;
a source on the multi-layer channel layer;
a drain on the multi-layer channel layer, separated from the source; and
a gate on the multi-layer channel layer,wherein one of the first layer and the second layer is closer to the gate, anda thickness of the one of the first layer and the second layer is about 30 Å
to about 200 Å
.
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Abstract
Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof.
59 Citations
17 Claims
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1. A semiconductor device, comprising:
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a multi-layer channel including at least a first layer and a second layer which have different carrier mobilities and formed of different oxide materials; a source on the multi-layer channel layer; a drain on the multi-layer channel layer, separated from the source; and a gate on the multi-layer channel layer, wherein one of the first layer and the second layer is closer to the gate, and a thickness of the one of the first layer and the second layer is about 30 Å
to about 200 Å
. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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a multi-layer channel including at least a first layer and a second layer which have different carrier densities and formed of different oxide materials; a source on the multi-layer channel layer; a drain on the multi-layer channel layer, separated from the source; and a gate on the multi-layer channel layer, wherein one of the first layer and the second layer is closer to the gate, and a thickness of the one of the first layer and the second layer is about 30 Å
to about 200 Å
. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device, comprising:
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a multi-layer channel including at least a first layer and a second layer which have different carrier mobilities and formed of different oxide materials; a source on the multi-layer channel layer; a drain on the multi-layer channel layer, separated from the source; and a gate on the multi-layer channel layer, wherein the first layer is closer to the gate than the second layer, the first layer includes at least one oxide selected from the group consisting of indium zinc oxide (IZO), indium tin oxide (ITO), aluminum zinc oxide (AZO) and gallium zinc oxide (GZO), and the second layer includes gallium indium zinc oxide (GIZO).
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Specification