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Channel layers and semiconductor devices including the same

  • US 8,232,551 B2
  • Filed: 07/14/2009
  • Issued: 07/31/2012
  • Est. Priority Date: 07/14/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a multi-layer channel including at least a first layer and a second layer which have different carrier mobilities and formed of different oxide materials;

    a source on the multi-layer channel layer;

    a drain on the multi-layer channel layer, separated from the source; and

    a gate on the multi-layer channel layer,wherein one of the first layer and the second layer is closer to the gate, anda thickness of the one of the first layer and the second layer is about 30 Å

    to about 200 Å

    .

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