Semiconductor chip assembly with post/base heat spreader and ceramic block in post

• US 8,232,576 B1
• Filed: 08/01/2010
• Issued: 07/31/2012
• Est. Priority Date: 03/25/2008
• Status: Active Grant

• Current Assignee: Bridge Semiconductor Corporation
• Original Assignee: Bridge Semiconductor Corporation
• Inventors: Lin, Charles W. C., Wang, Chia-Chung, Lim, Sangwhoo
• Primary Examiner(s): Nadav, Ori
• Application Number:
  US12/848,175
• Time in Patent Office: 730 Days
• Field of Search: 257/99, 257/706, 257/707, 257/711, 257/712, 257/717
• US Class Current: 257/99
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 2224/29144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/32188 the layer connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/48639 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48644 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83805 involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/83815 Reflow soldering
• CPC Class Codes: H01L 2224/85207 Thermosonic bonding
• CPC Class Codes: H01L 2224/85439 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/85444 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/3677 : Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H05K 1/0204 : using means for thermal conduction connection in the thickness direction of the substrate H05K1/0207 takes precedence
• CPC Class Codes: H05K 1/021 : Components thermally connected to metal substrates or heat-sinks by insert mounting
• CPC Class Codes: H05K 2201/09054 : Raised area or protrusion of metal substrate
• CPC Class Codes: H05K 2201/09745 : Recess in conductor, e.g. in pad or in metallic substrate
• CPC Class Codes: H05K 2201/10106 : Light emitting diode [LED]
• CPC Class Codes: H05K 3/0061 : onto a metallic substrate, e.g. a heat sink heat sinks for electric apparatus H05K7/20

Abstract

A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post, a base and a ceramic block. The post extends upwardly from the base into an opening in the adhesive, the base extends laterally from the post and the ceramic block is embedded in the post. The semiconductor device overlaps the ceramic block, is electrically connected to the conductive trace and is thermally connected to the ceramic block. The adhesive extends between the post and the conductive trace and between the base and the conductive trace. The conductive trace provides signal routing between a pad and a terminal.

Claims

1. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base and a ceramic block, wherein the post is adjacent to the base and extends above the base in an upward direction, the base extends below the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, the post and the base are metal and the ceramic block contacts and is embedded in the post in a cavity in the post that faces in the upward direction; and

a conductive trace that includes a pad and a terminal;

wherein the semiconductor device overlaps the ceramic block, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the ceramic block and thereby thermally connected to the base;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;

wherein the conductive trace is located outside the cavity; and

wherein the post extends into the opening, and the base extends below the semiconductor device and the pad.

2. The assembly of claim 1, wherein the semiconductor device is an LED chip.

3. The assembly of claim 1, wherein the semiconductor device is a semiconductor chip, is electrically connected to the pad using a wire bond and is thermally connected to the ceramic block using a die attach.

4. The assembly of claim 1, wherein the semiconductor device is electrically isolated from the post by the ceramic block.

5. The assembly of claim 1, wherein the adhesive contacts the post and the base, covers and surrounds the post in the lateral directions and conformally coats sidewalls of the post and a top surface of the base outside the post.

6. The assembly of claim 1, wherein the adhesive extends laterally from the post beyond the terminal and extends to peripheral edges of the assembly.

7. The assembly of claim 1, wherein the post is integral with the base.

8. The assembly of claim 1, wherein the base covers the semiconductor device, the post, the adhesive and the conductive trace in the downward direction and extends to peripheral edges of the assembly.

9. The assembly of claim 1, wherein the post has a diameter that decreases as it extends upwardly from the base to its top surface.

10. The assembly of claim 1, wherein the post and the base are copper or aluminum and the ceramic block is alumina, silicon carbide or aluminum nitride.

11. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base and a ceramic block, wherein the post is adjacent to the base and extends above the base in an upward direction, the base extends below the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, the post and the base are metal and the ceramic block contacts and is embedded in the post in a cavity in the post that faces in the upward direction;

a substrate that includes a dielectric layer, wherein an aperture extends through the substrate; and

a conductive trace that includes a pad and a terminal;

wherein the semiconductor device overlaps the post, the base and the ceramic block, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the ceramic block and thereby thermally connected to the base;

wherein the adhesive is mounted on and extends above the base, extends between the post and the substrate, extends laterally from the post to or beyond the terminal and is sandwiched between the post and the dielectric layer and between the base and the dielectric layer;

wherein the substrate is mounted on the adhesive and extends above the base;

wherein the conductive trace contacts the dielectric layer and is located outside the cavity; and

wherein the post extends into the opening and the aperture, and the base extends below the semiconductor device, the substrate and the pad.

12. The assembly of claim 11, wherein the semiconductor device is a semiconductor chip, is electrically connected to the pad using a wire bond and is thermally connected to the ceramic block using a die attach.

13. The assembly of claim 11, wherein the adhesive extends into a gap in the aperture between the post and the substrate, contacts the post and the dielectric layer in the gap, contacts the base and the dielectric layer outside the gap, covers and surrounds the post in the lateral directions, extends laterally from the post beyond the terminal and extends to peripheral edges of the assembly.

14. The assembly of claim 11, wherein the post has a diameter that decreases as it extends upwardly from the base to its top surface.

15. The assembly of claim 11, wherein the post and the base are copper or aluminum and the ceramic block is alumina, silicon carbide or aluminum nitride.

16. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base, a ceramic block and a cap, wherein the post is adjacent to and integral with the base and extends above the base in an upward direction, the base extends below the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, the ceramic block contacts and is embedded in the post in a cavity in the post that faces in the upward direction, the cap contacts and overlaps the ceramic block and the post, the base and the cap are metal;

a substrate that includes a dielectric layer, wherein an aperture extends through the substrate; and

a conductive trace that includes a pad and a terminal;

wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap and the ceramic block, is electrically connected to the pad and thereby electrically connected to the terminal, is electrically isolated from the post and the base by the ceramic block and is thermally connected to the cap, thermally connected to the ceramic block by the cap, thermally connected to the post by the ceramic block and thermally connected to the base by the post;

wherein the adhesive is mounted on and extends above the base, extends into a gap in the aperture between the post and the substrate, extends across the dielectric layer in the gap, is sandwiched between the post and the dielectric layer within the gap, is sandwiched between the base and the dielectric layer outside the gap, covers and surrounds the post in the lateral directions, extends from the post beyond the terminal, extends laterally from the post to or beyond the terminal and extends to peripheral edges of the assembly;

wherein the substrate is mounted on the adhesive, extends above the base and is located outside the cavity;

wherein the conductive trace contacts the dielectric layer and is located outside the cavity; and

wherein the post extends into the opening, and the base extends below the semiconductor device, the substrate and the pad.

17. The assembly of claim 16, wherein the semiconductor device is a semiconductor chip, is electrically connected to the pad using a wire bond and is thermally connected to the cap using a die attach.

18. The assembly of claim 16, wherein the substrate is spaced from the heat spreader, the adhesive contacts the post and the dielectric layer in the gap and contacts the base and the dielectric layer outside the gap and the ceramic block is spaced from the base, the adhesive, the substrate and the conductive trace.

19. The assembly of claim 16, wherein the post has a diameter that decreases as it extends upwardly from the base to its top surface and the cap is coplanar with the pad.

20. The assembly of claim 16, wherein the post is copper and the ceramic block is alumina.