Semiconductor device and method for producing a semiconductor device
First Claim
1. A semiconductor device, comprising:
- a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer;
a region of the first conductivity type arranged in the second semiconductor layer;
a first electrode contacting the region of the first conductivity type and the second semiconductor layer;
a first trench extending into the first semiconductor layer;
a second trench extending into the first semiconductor layer;
a gate electrode arranged in the second trench;
a further insulating layer extending along side walls and along a base of the second trench, wherein the further insulating layer includes a thickness higher than a thickness of an insulating layer extending along side walls of the first trench; and
a voltage dependent short circuit diverter structure including electrically conductive material arranged in the first trench and coupled to the first electrode and a diverter region of the second conductivity type arranged to provide a diverter channel region of the second conductivity type between the diverter region and the second semiconductor layer in the event of a short circuit.
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Accused Products
Abstract
A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer. Further, the semiconductor device has a region of the first conductivity type arranged in the second semiconductor layer. A first electrode contacts the region of the first conductivity type and the second semiconductor layer. A first trench extends into the first semiconductor layer, and a voltage dependent short circuit diverter structure includes electrically conductive material arranged in the first trench and coupled to the first electrode and a highly-doped diverter region of the second conductivity type. The diverter region of the voltage dependent short circuit diverter structure has the second conductivity type and is arranged to provide a diverter channel region of the second conductivity type between the diverter region and the second semiconductor layer in the event of a short circuit.
14 Citations
17 Claims
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1. A semiconductor device, comprising:
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a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer; a region of the first conductivity type arranged in the second semiconductor layer; a first electrode contacting the region of the first conductivity type and the second semiconductor layer; a first trench extending into the first semiconductor layer; a second trench extending into the first semiconductor layer; a gate electrode arranged in the second trench; a further insulating layer extending along side walls and along a base of the second trench, wherein the further insulating layer includes a thickness higher than a thickness of an insulating layer extending along side walls of the first trench; and a voltage dependent short circuit diverter structure including electrically conductive material arranged in the first trench and coupled to the first electrode and a diverter region of the second conductivity type arranged to provide a diverter channel region of the second conductivity type between the diverter region and the second semiconductor layer in the event of a short circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device, comprising:
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a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer; a region of the first conductivity type arranged in the second semiconductor layer; a first electrode contacting the region of the first conductivity type and the second semiconductor layer; a first trench extending into the first semiconductor layer; a second trench extending into the first semiconductor layer; a further insulating layer extending along side walls and along a base of the second trench, wherein the further insulating layer includes a thickness higher than a thickness of an insulating layer extending along side walls of the first trench; and a voltage dependent short circuit diverter structure including electrically conductive material arranged in the first trench and coupled to the first electrode and a diverter region of the second conductivity type arranged to provide a diverter channel region of the second conductivity type between the diverter region and the second semiconductor layer in the event of a short circuit, wherein the diverter region at least partially surrounds the base of the second trench and wherein the diverter region is at least partially arranged adjacent the first trench. - View Dependent Claims (15)
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16. A semiconductor device comprising:
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a MOS-controlled semiconductor device including a channel of a first conductivity type and a voltage dependent short circuit diverter structure including electrically conductive material arranged in a first trench and a diverter region arranged surrounding a base of a second trench, wherein during a short circuit, the voltage dependent short circuit diverter structure provides a diverter channel of a second conductivity type complementary to the first conductivity type; and wherein an insulating layer extends along side walls and along the base of the second trench, wherein the insulating layer includes a thickness higher than a thickness of an insulating layer extending along side walls of the first trench. - View Dependent Claims (17)
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Specification