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Semiconductor device and method for producing a semiconductor device

  • US 8,232,579 B2
  • Filed: 03/11/2009
  • Issued: 07/31/2012
  • Est. Priority Date: 03/11/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor layer of a first conductivity type;

    a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer;

    a region of the first conductivity type arranged in the second semiconductor layer;

    a first electrode contacting the region of the first conductivity type and the second semiconductor layer;

    a first trench extending into the first semiconductor layer;

    a second trench extending into the first semiconductor layer;

    a gate electrode arranged in the second trench;

    a further insulating layer extending along side walls and along a base of the second trench, wherein the further insulating layer includes a thickness higher than a thickness of an insulating layer extending along side walls of the first trench; and

    a voltage dependent short circuit diverter structure including electrically conductive material arranged in the first trench and coupled to the first electrode and a diverter region of the second conductivity type arranged to provide a diverter channel region of the second conductivity type between the diverter region and the second semiconductor layer in the event of a short circuit.

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