Structure for interconnect structure containing various capping materials for electrical fuse and other related applications

• US 8,232,649 B2
• Filed: 03/21/2011
• Issued: 07/31/2012
• Est. Priority Date: 05/09/2008
• Status: Active Grant

• Current Assignee: Auriga Innovations, Inc. (Quarterhill Inc. (f/k/a Wi-LAN Inc.))
• Original Assignee: International Business Machines Corporation
• Inventors: Hsu, Louis L., Tonti, William R., Yang, Chih-Chao
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/052,662
• Publication Number:
  US 20110169127A1
• Time in Patent Office: 498 Days
• Field of Search: 257/209, 257/528, 257/529, 257/665, 257/E21.592, 257/E23.149, 257/E23.15, 257/211, 257/758
• US Class Current: 257/758
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 23/5256 comprising fuses, i.e. connections having their state changed from conductive to non-conductive
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.

Claims

1. A structure comprising:

a wiring interconnect structure having an interface comprising a metal wiring layer and a capping layer of a first material type; and

an electronic fuse interconnect structure having an interface comprising a metal wiring layer and a capping layer of a second material type,

wherein the interface of the electronic fuse interconnect structure includes a metal layer and the capping layer which comprises SiN and the interface of the wiring interconnect structure includes a metal layer and the capping layer comprises one of;

Co(W,P,B), Ru, Ir, Rh and Pt.

2. A structure comprising:

a wiring interconnect structure having an interface comprising a metal wiring layer and a capping layer of a first material type; and

an electronic fuse interconnect structure having an interface comprising a metal wiring layer and a capping layer of a second material type,

wherein the first material type is different than the second material type.

3. A structure comprising:

a wiring interconnect structure having an interface comprising a metal wiring layer and a capping layer of a first material type; and

an electronic fuse interconnect structure having an interface comprising a metal wiring layer and a capping layer of a second material type,

wherein the second material type and/or the metal wiring layer of the electronic fuse interconnect structure is damaged thereby exhibiting degraded interfacial properties between the metal wiring layer and the second material type.

4. The structure of claim 3, wherein the damage is a treatment from one of radiation sources and laser light.

5. A structure comprising:

a wiring interconnect structure having an interface comprising a metal wiring layer and a capping layer of a first material type; and

an electronic fuse interconnect structure having an interface comprising a metal wiring layer and a capping layer of a second material type,

wherein the wiring interconnect structure has a greater electromigration (EM) resistance than the electronic fuse interconnect structure and the second material type in combination with a metal layer is configured to provide EM resistance.

6. A structure comprising:

a wiring interconnect structure having an interface comprising a metal wiring layer and a capping layer of a first material type;

an electronic fuse interconnect structure having an interface comprising a metal wiring layer and a capping layer of a second material type; and

a third interconnect structure having a third interfacial structure, different from a first and second interfacial structure of the electronic fuse interconnect structure and the wiring interconnect structure.