Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
First Claim
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1. A method of forming a capacitor, comprising:
- depositing inner conductive metal capacitor electrode material over a substrate;
forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×
10−
7 amps/cm2 at from −
1.1V to +1.1V;
the forming of the capacitor dielectric region comprising;
depositing an amorphous ZrO2-comprising material to a thickness no greater than 35 Angstroms outward of the inner conductive metal capacitor electrode material;
annealing the amorphous ZrO2-comprising material having thickness no greater than 35 Angstroms after its deposition to form crystalline ZrO2-comprising material having a thickness no greater than 35 Angstroms;
after the annealing of the amorphous ZrO2-comprising material, depositing an Al2O3-comprising material outward of the crystalline ZrO2-comprising material, the Al2O3-comprising material having a thickness of from 2 Angstroms to 16 Angstroms;
depositing an amorphous TiO2-comprising material to a thickness no greater than 50 Angstroms outward of the Al2O3-comprising material; and
annealing the amorphous TiO2-comprising material having thickness no greater than 50 Angstroms in the presence of oxygen after its deposition to form crystalline TiO2-comprising material; and
after the annealing of the amorphous TiO2-comprising material, depositing outer conductive metal capacitor electrode material outward of the crystalline TiO2-comprising material.
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Abstract
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
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Citations
25 Claims
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1. A method of forming a capacitor, comprising:
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depositing inner conductive metal capacitor electrode material over a substrate; forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×
10−
7 amps/cm2 at from −
1.1V to +1.1V;
the forming of the capacitor dielectric region comprising;depositing an amorphous ZrO2-comprising material to a thickness no greater than 35 Angstroms outward of the inner conductive metal capacitor electrode material; annealing the amorphous ZrO2-comprising material having thickness no greater than 35 Angstroms after its deposition to form crystalline ZrO2-comprising material having a thickness no greater than 35 Angstroms; after the annealing of the amorphous ZrO2-comprising material, depositing an Al2O3-comprising material outward of the crystalline ZrO2-comprising material, the Al2O3-comprising material having a thickness of from 2 Angstroms to 16 Angstroms; depositing an amorphous TiO2-comprising material to a thickness no greater than 50 Angstroms outward of the Al2O3-comprising material; and annealing the amorphous TiO2-comprising material having thickness no greater than 50 Angstroms in the presence of oxygen after its deposition to form crystalline TiO2-comprising material; and after the annealing of the amorphous TiO2-comprising material, depositing outer conductive metal capacitor electrode material outward of the crystalline TiO2-comprising material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming a capacitor, comprising:
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depositing inner conductive metal capacitor electrode material over a substrate; forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×
10−
7 amps/cm2 at from −
1.1V to +1.1V;
the forming of the capacitor dielectric region comprising;depositing an amorphous ZrO2-comprising material to a thickness no greater than 35 Angstroms outward of the inner conductive metal capacitor electrode material; annealing the amorphous ZrO2-comprising having thickness no greater than 35 Angstroms after its deposition to form crystalline ZrO2-comprising material having a thickness no greater than 35 Angstroms; after the annealing of the amorphous ZrO2-comprising material, depositing an Al2O3-comprising material outward of the crystalline ZrO2-comprising material, the Al2O3-comprising material having a thickness of from 2 Angstroms to 16 Angstroms; and depositing an amorphous TiO2-comprising material to a thickness greater than 50 Angstroms outward of the Al2O3-comprising material; and depositing outer conductive metal capacitor electrode material outward of the TiO2-comprising material at a temperature which transforms the amorphous TiO2-comprising material to be crystalline during said depositing of outer conductive metal capacitor electrode material. - View Dependent Claims (17, 18, 19)
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20. A method of forming a capacitor, comprising:
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depositing inner conductive metal capacitor electrode material over a substrate; forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×
10−
7 amps/cm2 at from −
1.1V to +1.1V;
the forming of the capacitor dielectric region comprising;depositing an amorphous ZrO2-comprising material to a thickness no greater than 35 Angstroms outward of the inner conductive metal capacitor electrode material; annealing the amorphous ZrO2-comprising having thickness no greater than 35 Angstroms after its deposition to form crystalline ZrO2-comprising material having a thickness no greater than 35 Angstroms; after the annealing of the amorphous ZrO2-comprising material, depositing an Al2O3-comprising material outward of the crystalline ZrO2-comprising material, the Al2O3-comprising material having a thickness of from 2 Angstroms to 16 Angstroms; and depositing an amorphous TiO2-comprising material to a thickness greater than 50 Angstroms outward of the Al2O3-comprising material; and depositing outer conductive metal capacitor electrode material outward of the TiO2-comprising material at a temperature which does not transform the TiO2-comprising material to be crystalline during said depositing of outer conductive metal capacitor electrode material; and after the depositing of the outer conductive metal capacitor electrode material, annealing the substrate having the amorphous TiO2-comprising material having thickness no greater than 50 Angstroms to form crystalline TiO2-comprising material.
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21. A method of forming a capacitor, comprising:
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depositing inner conductive metal capacitor electrode material over a substrate; forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×
10−
7 amps/cm2 at from −
1.1V to +1.1V;
the forming of the capacitor dielectric region comprising;depositing a first Al2O3-comprising material outward of the inner conductive metal capacitor electrode material, the first Al2O3-comprising material having a thickness of from 2 Angstroms to 10 Angstroms; depositing a TiO2-comprising material outward of the first Al2O3-comprising material, the TiO2-comprising material having a thickness of from 40 Angstroms to 80 Angstroms; depositing a second Al2O3-comprising material outward of the TiO2-comprising material, the second Al2O3-comprising material having a thickness of from 2 Angstroms to 10 Angstroms; depositing an amorphous ZrO2-comprising material to a thickness no greater than 35 Angstroms outward of the second Al2O3-comprising material; and annealing the amorphous ZrO2-comprising material having thickness no greater than 35 Angstroms after its deposition to form crystalline ZrO2-comprising material; and after the annealing of the amorphous ZrO2-comprising material, depositing outer conductive metal capacitor electrode material outward of the crystalline ZrO2-comprising material. - View Dependent Claims (22)
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23. A method of forming a capacitor, comprising:
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depositing inner conductive metal capacitor electrode material over a substrate; forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×
10−
7 amps/cm2 at from −
1.1V to +1.1V;
the forming of the capacitor dielectric region comprising;depositing a first Al2O3-comprising material outward of the inner conductive metal capacitor electrode material, the first Al2O3-comprising material having a thickness of from 2 Angstroms to 10 Angstroms; depositing a TiO2-comprising material outward of the first Al2O3-comprising material, the TiO2-comprising material having a thickness of from 40 Angstroms to 80 Angstroms; depositing a second Al2O3-comprising material outward of the TiO2-comprising material, the second Al2O3-comprising material having a thickness of from 2 Angstroms to 10 Angstroms; and depositing an amorphous ZrO2-comprising material to a thickness greater than 35 Angstroms outward of the second Al2O3-comprising material; and depositing outer conductive metal capacitor electrode material outward of the amorphous ZrO2-comprising material at a temperature which transforms the amorphous ZrO2-comprising material to be crystalline during said depositing of outer conductive metal capacitor electrode material. - View Dependent Claims (24)
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25. A method of forming a capacitor, comprising:
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depositing inner conductive metal capacitor electrode material over a substrate; forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×
10−
7 amps/cm2 at from −
1.1V to +1.1V;
the forming of the capacitor dielectric region comprising;depositing a first Al2O3-comprising material outward of the inner conductive metal capacitor electrode material, the first Al2O3-comprising material having a thickness of from 2 Angstroms to 10 Angstroms; depositing a TiO2-comprising material outward of the first Al2O3-comprising material, the TiO2-comprising material having a thickness of from 40 Angstroms to 80 Angstroms; depositing a second Al2O3-comprising material outward of the TiO2-comprising material, the second Al2O3-comprising material having a thickness of from 2 Angstroms to 10 Angstroms; and depositing an amorphous ZrO2-comprising material to a thickness greater than 35 Angstroms outward of the second Al2O3-comprising material; and depositing outer conductive metal capacitor electrode material outward of the amorphous ZrO2-comprising material at a temperature which does not transform the amorphous ZrO2-comprising material to be crystalline during said depositing of outer conductive metal capacitor electrode material; and after the depositing of the outer conductive metal capacitor electrode material, annealing the substrate having the amorphous ZrO2-comprising material having thickness no greater than 35 Angstroms to form crystalline ZrO2-comprising material.
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Specification