Foundry compatible process for manufacturing a magneto meter using lorentz force for integrated systems
First Claim
1. A method of fabricating an integrated electronic compass and circuit device comprising:
- providing a semiconductor substrate comprising a surface region;
forming one or more CMOS integrated circuits formed on one or more portions of the semiconductor substrate;
forming a thickness of dielectric material overlying the one or more CMOS integrated circuits;
joining a substrate overlying the thickness of dielectric material;
thinning the substrate to a predetermined thickness; and
forming an electronic compass device within one or more regions of the predetermined thickness of the substrate.
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Accused Products
Abstract
A method for fabricating an integrated electronic compass and circuit system. The fabrication method begins with providing a semiconductor substrate comprising a surface region. One or more CMOS integrated circuits are then formed on one or more portions of the semiconductor substrate. Once the CMOS circuits are formed, a thickness of dielectric material is formed overlying the one or more CMOS integrated circuits. A substrate is then joined overlying the thickness of the dielectric material. Once joined, the substrate is thinned to a predetermined thickness. Following the thinning process, an electric compass device is formed within one or more regions of the predetermined thickness of the substrate. Other mechanical devices or MEMS devices can also be formed within one or more regions of the thinned substrate.
54 Citations
20 Claims
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1. A method of fabricating an integrated electronic compass and circuit device comprising:
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providing a semiconductor substrate comprising a surface region; forming one or more CMOS integrated circuits formed on one or more portions of the semiconductor substrate; forming a thickness of dielectric material overlying the one or more CMOS integrated circuits; joining a substrate overlying the thickness of dielectric material; thinning the substrate to a predetermined thickness; and forming an electronic compass device within one or more regions of the predetermined thickness of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating an integrated electronic compass and circuit device comprising:
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providing a semiconductor substrate comprising a surface region; forming one or more CMOS integrated circuits formed on one or more portions of the semiconductor substrate; forming a thickness of dielectric material overlying the one or more CMOS integrated circuits; joining a substrate overlying the thickness of dielectric material; thinning the substrate to a predetermined thickness; forming one or more material layers overlying the thinned substrate; and etching the one or more material layers to form and electronic compass device having one or more electronic compass elements. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of fabricating an integrated electronic compass and circuit device comprising:
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providing a semiconductor substrate comprising a surface region; forming one or more CMOS integrated circuits formed on one or more portions of the semiconductor substrate; forming a thickness of dielectric material overlying the one or more CMOS integrated circuits; joining a substrate overlying the thickness of dielectric material; thinning the substrate to a predetermined thickness;
forming one or more material layers overlying the thinned substrate;etching the one or more material layers to form an electronic compass device having one or more electronic compass elements; coupling a resonator device to the electronic compass devices;
integrating the electronic compass device with at least one MEMS device; and
packaging the electronic compass device and the MEMS device(s).
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Specification