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Method of forming a light emitting diode emitter substrate with highly reflective metal bonding

  • US 8,236,584 B1
  • Filed: 02/11/2011
  • Issued: 08/07/2012
  • Est. Priority Date: 02/11/2011
  • Status: Active Grant
First Claim
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1. A method of fabricating a light emitting diode (LED) emitter substrate comprising:

  • forming a plurality of through silicon vias (TSVs) on a silicon substrate;

    depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs;

    forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate, wherein the metal layer completely fills the TSVs; and

    forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.

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