Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
First Claim
1. A method for forming a thin film photovoltaic device, the method comprising:
- providing a transparent substrate comprising a surface region;
forming a first electrode layer overlying the surface region;
forming a copper layer overlying the first electrode layer;
forming an indium layer overlying the copper layer to form a multi-layered structure;
subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species;
forming a bulk copper indium disulfide material from at least the treatment process of the multi-layered structure, the bulk copper indium disulfide material comprising one or more portions of copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95;
1 and the bulk copper indium disulfide material having a surface region characterized by a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95;
1;
subjecting the copper poor surface and one or more portions of the bulk copper indium disulfide material to metal cation species to convert the copper poor surface from an n-type characteristic to a p-type characteristic and to convert any of the one or more portions of the bulk copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95;
1 from an n-type characteristic to a p-type characteristic;
forming a window layer overlying the copper indium disulfide material; and
whereupon the subjecting of the copper poor surface and the one or more portions of the bulk copper indium disulfide material is performed during at least a thermal treatment process for a time period.
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Accused Products
Abstract
A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a surface region characterized by a copper poor surface having a copper-to-indium atomic ratio of less than about 0.95:1. The copper poor surface and one or more portions of the bulk copper indium disulfide material are subjected to metal cation species to convert the copper poor surface from an n-type characteristic to a p-type characteristic and to convert any of the one or more portions of the bulk copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95:1 from a p-type characteristic to an n-type characteristic. A window layer is formed overlying the copper indium disulfide material.
223 Citations
15 Claims
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1. A method for forming a thin film photovoltaic device, the method comprising:
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providing a transparent substrate comprising a surface region; forming a first electrode layer overlying the surface region; forming a copper layer overlying the first electrode layer; forming an indium layer overlying the copper layer to form a multi-layered structure; subjecting at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species; forming a bulk copper indium disulfide material from at least the treatment process of the multi-layered structure, the bulk copper indium disulfide material comprising one or more portions of copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95;
1 and the bulk copper indium disulfide material having a surface region characterized by a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95;
1;subjecting the copper poor surface and one or more portions of the bulk copper indium disulfide material to metal cation species to convert the copper poor surface from an n-type characteristic to a p-type characteristic and to convert any of the one or more portions of the bulk copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95;
1 from an n-type characteristic to a p-type characteristic;forming a window layer overlying the copper indium disulfide material; and whereupon the subjecting of the copper poor surface and the one or more portions of the bulk copper indium disulfide material is performed during at least a thermal treatment process for a time period. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification