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Tunable spacers for improved gapfill

  • US 8,236,678 B2
  • Filed: 12/17/2008
  • Issued: 08/07/2012
  • Est. Priority Date: 12/17/2008
  • Status: Expired due to Fees
First Claim
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1. A method for forming a device comprising:

  • providing a substrate with an active region, the substrate is prepared with a gate;

    forming sidewall spacers on sidewall of the gate, wherein a portion of the spacers is processed to produce an etch rate differential between the processed portion and an unprocessed portion of the spacers; and

    performing a tuning process on the spacers to produce a desired profile based on the etch rate differential of the processed and unprocessed portions of the spacers.

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