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Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures

  • US 8,236,706 B2
  • Filed: 12/12/2008
  • Issued: 08/07/2012
  • Est. Priority Date: 12/12/2008
  • Status: Active Grant
First Claim
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1. A method for selective oxidation of silicon on a substrate in the presence of other materials, comprising:

  • placing the substrate having silicon in a vacuum processing chamber;

    generating a plasma remotely from the substrate, such that no part of the plasma touches the substrate;

    injecting into the plasma H2 and O2 gases;

    providing flow path for radicals from the plasma to reach the substrate; and

    ,preventing ions from reaching the substrate;

    to thereby oxidize the silicon and grow a layer of silicon oxide from the silicon.

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