Reduced pattern loading using bis(diethylamino)silane (C 8 H 22 N 2 Si) as silicon precursor

• US 8,236,708 B2
• Filed: 08/13/2010
• Issued: 08/07/2012
• Est. Priority Date: 03/09/2010
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kweskin, Sasha, Gee, Paul Edward, Venkataraman, Shankar, Sapre, Kedar
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US12/855,877
• Publication Number:
  US 20110223774A1
• Time in Patent Office: 725 Days
• Field of Search: 438/787, 438/788, 438/789, 438/790, 427/255.37, 257/E21.278
• US Class Current: 438/790
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence

Abstract

Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.

Claims

1. A method for forming a conformal silicon oxide layer on a patterned substrate in a substrate processing region of a processing chamber, wherein the patterned substrate has a densely patterned region and a sparsely patterned region, the method comprising:

flowing BDEAS into the substrate processing region;

flowing molecular oxygen (O₂) into the substrate processing region;

flowing ozone (O₃) with a restricted ozone flow rate into the substrate processing region; and

forming the conformal silicon oxide layer on the patterned substrate from the BDEAS, the molecular oxygen and the ozone by chemical vapor deposition, wherein the restricted ozone flow rate is selected such that a thickness of the conformal silicon oxide layer in the densely patterned region is within a conformality percentage of a thickness in the sparsely patterned region.

2. The method of claim 1 wherein the operations of flowing BDEAS, molecular oxygen (O₂) and ozone (O₃) are concurrent.

3. The method of claim 1 wherein the conformality percentage is about 30%.

4. The method of claim 1 wherein the two thicknesses of the conformal silicon oxide layer in the densely and sparsely patterned regions are measured on a substantially-vertical surface of the patterned substrate.

5. The method of claim 1 wherein the two thicknesses of the conformal silicon oxide layer in the densely and sparsely patterned regions are measured on a substantially-horizontal surface of the patterned substrate.

6. The method of claim 1 wherein the operation of flowing BDEAS comprises flowing BDEAS at a rate greater than or about 100 mg/min.

7. The method of claim 1 wherein essentially no plasma is applied to the substrate processing region.

8. The method of claim 1 wherein a pressure in the substrate processing region during formation of the conformal silicon oxide layer is below or about 350 Torr.

9. The method of claim 1 wherein a temperature of the patterned substrate during formation of the conformal silicon oxide layer is below or about 400°

C.

10. The method of claim 1 wherein the restricted ozone flow rate is less than about 1 slm.

11. The method of claim 1 wherein the restricted ozone flow rate is less than about 500 sccm.

12. The method of claim 1 wherein the restricted ozone flow rate is less than about 300 sccm.

13. The method of claim 1 wherein an average exposed substantially-vertical area prior to deposition in the densely patterned region exceeds that of the sparsely patterned region by a multiplicative factor of about 2.

14. The method of claim 1 further comprising the operation of flowing a carrier gas which carries the BDEAS into the substrate processing region.