Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
First Claim
1. A semiconductor light emitting device having a luminous layer sandwiched between a plurality of layers, comprising:
- a light transmission layer that is one layer of the plurality of layers, disposed on a light emitting side of the luminous layer, and having depressions on a surface facing away from the luminous layer, wherein the light transmission layer is an n-GaN layer doped with Si; and
a transmission membrane that is one layer of the plurality of layers, disposed on the light transmission layer so as to follow contours of the depressions,a thin metallic film that is one layer of the plurality of layers, disposed on a side facing away from the light emitting side of the luminous layer, whereinthe depressions of the light transmission layer exist in an interface portion that interfaces with the transmission membrane.
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Accused Products
Abstract
The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.
17 Citations
20 Claims
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1. A semiconductor light emitting device having a luminous layer sandwiched between a plurality of layers, comprising:
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a light transmission layer that is one layer of the plurality of layers, disposed on a light emitting side of the luminous layer, and having depressions on a surface facing away from the luminous layer, wherein the light transmission layer is an n-GaN layer doped with Si; and a transmission membrane that is one layer of the plurality of layers, disposed on the light transmission layer so as to follow contours of the depressions, a thin metallic film that is one layer of the plurality of layers, disposed on a side facing away from the light emitting side of the luminous layer, wherein the depressions of the light transmission layer exist in an interface portion that interfaces with the transmission membrane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor light emitting device having a luminous layer sandwiched between a plurality of layers, comprising:
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a light transmission layer that is one layer of the plurality of layers, disposed on a light emitting side of the luminous layer, and having depressions on a surface facing away from the luminous layer; and a transmission membrane that is one layer of the plurality of layers, disposed on the light transmission layer so as to follow contours of the depressions, a thin metallic film that is one layer of the plurality of layers, disposed on a side facing away from the light emitting side of the luminous layer, wherein the depressions of the light transmission layer exist in an interface portion that interfaces with the transmission membrane, wherein the luminous layer is provided on a light transmission substrate, the light transmission layer is partially or entirely formed on the light transmission substrate, and the depressions are provided on a main surface on a side facing away from a side of the light transmission substrate on which the luminous layer is provided.
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20. A semiconductor light emitting device having a luminous layer sandwiched between a plurality of layers, comprising:
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a light transmission layer that is one layer of the plurality of layers, disposed on a light emitting side of the luminous layer, and having depressions on a surface facing away from the luminous layer; a transmission membrane that is one layer of the plurality of layers, disposed on the light transmission layer so as to follow contours of the depressions, a thin metallic film that is one layer of the plurality of layers, disposed on a side facing away from the light emitting side of the luminous layer, wherein the depressions of the light transmission layer exist in an interface portion that interfaces with the transmission membrane layer is provided on a substrate, and the light transmission layer is provided on a main surface of the luminous layer facing away from the substrate, and a DBR layer is inserted between the luminous layer and the substrate.
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Specification