Light emitting device
First Claim
1. A light-emitting device comprising:
- a switching transistor and a driving transistor, each including a semiconductor layer;
a source line electrically connected to the semiconductor layer of the switching transistor;
a gate line adjacent to the semiconductor layer of the switching transistor;
a wiring electrically connected to the semiconductor layer of the driving transistor;
an interlayer insulating film over the switching transistor and the driving transistor;
a pixel electrode over and in contact with the interlayer insulating film, wherein the pixel electrode is electrically connected to the semiconductor layer of the driving transistor;
a light emitting layer over the pixel electrode;
a counter electrode over the light emitting layer; and
a conductive film over and in contact with the interlayer insulating film, wherein the conductive film has a region overlapping the wiring.
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Accused Products
Abstract
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
54 Citations
24 Claims
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1. A light-emitting device comprising:
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a switching transistor and a driving transistor, each including a semiconductor layer; a source line electrically connected to the semiconductor layer of the switching transistor; a gate line adjacent to the semiconductor layer of the switching transistor; a wiring electrically connected to the semiconductor layer of the driving transistor; an interlayer insulating film over the switching transistor and the driving transistor; a pixel electrode over and in contact with the interlayer insulating film, wherein the pixel electrode is electrically connected to the semiconductor layer of the driving transistor; a light emitting layer over the pixel electrode; a counter electrode over the light emitting layer; and a conductive film over and in contact with the interlayer insulating film, wherein the conductive film has a region overlapping the wiring. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A light-emitting device comprising:
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a switching transistor and a driving transistor, each including a semiconductor layer; a source line electrically connected to the semiconductor layer of the switching transistor; a gate line adjacent to the semiconductor layer of the switching transistor; a wiring electrically connected to the semiconductor layer of the driving transistor; an interlayer insulating film over the switching transistor and the driving transistor; a pixel electrode over and in contact with the interlayer insulating film, wherein the pixel electrode is electrically connected to the semiconductor layer of the driving transistor; a light emitting layer over the pixel electrode; a counter electrode over the light emitting layer; and a conductive film over and in contact with the interlayer insulating film, wherein the conductive film has a region extending in parallel with the gate line. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A light-emitting device comprising:
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a switching transistor and a driving transistor, each including a semiconductor layer; a source line electrically connected to the semiconductor layer of the switching transistor; a gate line adjacent to the semiconductor layer of the switching transistor; a wiring electrically connected to the semiconductor layer of the driving transistor; an interlayer insulating film over the switching transistor and the driving transistor; a pixel electrode over and in contact with the interlayer insulating film, wherein the pixel electrode is electrically connected to the semiconductor layer of the driving transistor; a light emitting layer over the pixel electrode; a counter electrode over the light emitting layer; and a conductive film over and in contact with the interlayer insulating film, wherein the conductive film has a region overlapping the wiring and extending in parallel with the gate line. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification