System comprising a semiconductor device and structure

• US 8,237,228 B2
• Filed: 09/27/2011
• Issued: 08/07/2012
• Est. Priority Date: 10/12/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Monolithic 3D, Inc.
• Inventors: Or-Bach, Zvi, Cronquist, Brian, Beinglass, Israel, de Jong, Jan Lodewijk, Sekar, Deepak C., Wurman, Zeev
• Primary Examiner(s): PERT, EVAN T
• Application Number:
  US13/246,384
• Publication Number:
  US 20120012895A1
• Time in Patent Office: 315 Days
• Field of Search: 257/369, 257/401, 257/E27.108
• US Class Current: 257/369
• CPC Class Codes: G03F 9/7076 Mark details, e.g. phase grating mark, temporary mark
• CPC Class Codes: G03F 9/7084 Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 21/823871 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2223/5442 comprising non digital, non alphanumeric information, e.g. symbols
• CPC Class Codes: H01L 2223/54426 for alignment
• CPC Class Codes: H01L 2223/54453 for use prior to dicing
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/80001 : by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
• CPC Class Codes: H01L 23/367 : Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/5226 : Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/528 : Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/53214 : the principal metal being aluminium
• CPC Class Codes: H01L 23/53228 : the principal metal being copper
• CPC Class Codes: H01L 23/544 : Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 27/0207 : Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/0688 : Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/088 : the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/092 : complementary MIS field-effect transistors
• CPC Class Codes: H01L 27/105 : including field-effect components
• CPC Class Codes: H01L 27/11807 : CMOS gate arrays
• CPC Class Codes: H01L 27/11898 : Input and output buffer/driver structures
• CPC Class Codes: H01L 27/1203 : the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/42392 : fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/458 : for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66272 : Silicon vertical transistors H01L29/66242, H01L29/66257 and H01L29/66265 take precedence
• CPC Class Codes: H01L 29/66545 : using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66621 : using etching to form a recess at the gate location etching of semiconductor bodies H01L21/302
• CPC Class Codes: H01L 29/66848 : with a Schottky gate, i.e. MESFET
• CPC Class Codes: H01L 29/66901 : with a PN homojunction gate
• CPC Class Codes: H01L 29/732 : Vertical transistors
• CPC Class Codes: H01L 29/78639 : with a drain or source connected to a bulk conducting substrate
• CPC Class Codes: H01L 29/78642 : Vertical transistors
• CPC Class Codes: H01L 29/78645 : with multiple gate
• CPC Class Codes: H01L 29/808 : with a PN junction gate , e.g. PN homojunction gate H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence
• CPC Class Codes: H01L 29/812 : with a Schottky gate H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence; with Schottky contact on top of heterojunction gate H01L29/802
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H10B 10/00 : Static random access memory [SRAM] devices
• CPC Class Codes: H10B 10/125 : the MOSFET being a thin film transistor [TFT]
• CPC Class Codes: H10B 12/053 : the transistor being at least partially in a trench in the substrate vertical transistor in combination with a capacitor formed in a substrate trench H10B12/0383
• CPC Class Codes: H10B 12/09 : with simultaneous manufacture of the peripheral circuit region and memory cells
• CPC Class Codes: H10B 12/50 : Peripheral circuit region structures
• CPC Class Codes: H10B 20/00 : Read-only memory [ROM] devices
• CPC Class Codes: H10B 41/20 : characterised by three-dimensional arrangements, e.g. with cells on different height levels
• CPC Class Codes: H10B 43/20 : characterised by three-dimensional arrangements, e.g. with cells on different height levels

Abstract

A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.

Claims

1. A semiconductor device, comprising:

a first semiconductor layer comprising first transistors, wherein said first transistors are interconnected by at least one metal layer comprising aluminum or copper; and

a second mono-crystallized semiconductor layer comprising second transistors and overlaying said at least one metal layer,

wherein said at least one metal layer is in-between said first semiconductor layer and said second mono-crystallized semiconductor layer,

wherein said second mono-crystallized semiconductor layer is less than 150 nm in thickness, and

wherein at least one of said second transistors is an N-type transistor and at least one of said second transistors is a P-type transistor.

2. A semiconductor device according to claim 1, further comprising:

a plurality of connection paths between said second transistors and said first transistors,

wherein said plurality of connection paths comprise vias through said second mono-crystallized semiconductor layer, and

wherein at least one of said vias is less than about 150 nm in diameter.

3. A semiconductor device according to claim 1, further comprising:

a plurality of connection paths between said second transistors and said first transistors, and said first semiconductor layer comprising first alignment marks,

wherein at least one of said connection paths has a contact to said second transistors, and

wherein said contact is aligned to one of said first alignment marks.

4. A mobile phone comprising a semiconductor device according to claim 1.

5. A semiconductor device according to claim 1,

wherein said second transistors form at least one second circuit,

wherein said first transistors form a first circuit substantially the same as the second circuit, and

the semiconductor device further comprises:

a switch operable to cause one of said first and second circuits to be replaced by the other of said first and second circuits.

6. A semiconductor device according to claim 1, further comprising:

a heat spreader between said first semiconductor layer and said second mono-crystallized semiconductor layer.

7. A semiconductor device according to claim 1 wherein at least one of said second transistors is one of:

(i) a recessed-channel transistor (RCAT);

(ii) a junction-less transistor;

(iii) a replacement-gate transistor;

(iv) a thin-side-up transistor;

(v) a double gate transistor;

or

(vi) a horizontally oriented transistor.

8. A semiconductor device comprising:

a first semiconductor layer comprising first transistors, wherein said first transistors are interconnected by at least one metal layer comprising aluminum or copper;

a second mono-crystallized semiconductor layer comprising second transistors and overlaying said at least one metal layer,

wherein said at least one metal layer is in-between said first semiconductor layer and said second mono-crystallized semiconductor layer; and

a plurality of connection paths between said second transistors and said first transistors,

wherein said plurality of connection paths comprise vias through said second mono-crystallized semiconductor layer,

wherein at least one of said vias is less than about 150 nm in diameter, and

wherein said second transistors comprise horizontally oriented transistors.

9. A semiconductor device according to claim 8, further comprising:

a plurality of connection paths between said second transistors and said first transistors, and said first semiconductor layer comprising first alignment marks,

wherein at least one of said connection paths has a contact to said second transistors, and

wherein said contact is aligned to one of said first alignment marks.

10. A semiconductor device according to claim 8 wherein said second mono-crystallized semiconductor layer is less than about 150 nm in thickness.

11. A mobile phone comprising a semiconductor device according to claim 8.

12. A semiconductor device according to claim 8 wherein said second transistors comprise a plurality of N-type transistors and P-type transistors.

13. A semiconductor device according to claim 8, further comprising:

a heat spreader between said first semiconductor layer and said second mono-crystallized semiconductor layer.

14. A semiconductor device according to claim 8 wherein at least one of said second transistors is one of:

(i) a recessed-channel transistor (RCAT);

(ii) a junction-less transistor;

(iii) a replacement-gate transistor;

(iv) a thin-side-up transistor;

or

(v) a double gate transistor.

15. A semiconductor device comprising:

a first semiconductor layer comprising first alignment marks and first transistors, wherein said first transistors are interconnected by at least one metal layer comprising aluminum or copper;

a second mono-crystallized semiconductor layer comprising second transistors and overlaying said at least one metal layer, wherein said at least one metal layer is in-between said first semiconductor layer and said second mono-crystallized semiconductor layer, and

a plurality of connection paths between said second transistors and said first transistors,

wherein said second transistors comprise horizontally oriented transistors, and

wherein at least one of said connection paths has a contact to said second transistors wherein said contact is aligned to one of said first alignment marks.

16. A semiconductor device according to claim 15 wherein said second mono-crystallized semiconductor layer is less than about 150 nm in thickness.

17. A mobile phone comprising a semiconductor device according to claim 15.

18. A semiconductor device according to claim 15 wherein said second transistors comprise a plurality of N-type transistors and P-type transistors.

19. A semiconductor device according to claim 15,

wherein said second mono-crystallized semiconductor layer comprises a plurality of thermal contacts, and

wherein said thermal contacts are adapted to conduct heat but not electric current.

20. A semiconductor device according to claim 15, further comprising:

a heat spreader between said first semiconductor layer and said second mono-crystallized semiconductor layer.

21. A semiconductor device according to claim 15, further comprising:

a plurality of connection paths between said second transistors and said first transistors,

wherein said connection paths comprise vias through said second mono-crystallized semiconductor layer, and

wherein at least one of said vias is less than about 150 nm in diameter.

22. A semiconductor device according to claim 15 wherein at least one of said second transistors is one of:

(i) a recessed-channel transistor (RCAT);

(ii) a junction-less transistor;

(iii) a replacement-gate transistor;

(iv) a thin-side-up transistor;

or

(v) a double gate transistor.

23. A 3D IC based system comprising:

a first semiconductor layer comprising first alignment marks and first transistors, wherein said first transistors are interconnected by at least one metal layer comprising aluminum or copper;

a second mono-crystallized semiconductor layer comprising second transistors and overlaying said at least one metal layer, wherein said at least one metal layer is in-between said first semiconductor layer and said second mono-crystallized semiconductor layer; and

a reusable donor wafer,

wherein said second transistors comprise horizontally oriented transistors, and

wherein said second mono-crystallized semiconductor layer is transferred from said reusable donor wafer.

24. A system according to claim 23 wherein said second mono-crystallized semiconductor layer is less than about 150 nm in thickness.

25. A system according to claim 23 wherein said second transistors comprise a plurality of N-type transistors and P-type transistors.

26. A system according to claim 23, further comprising:

a heat spreader between said first semiconductor layer and said second mono-crystallized semiconductor layer.

27. A system according to claim 23,

wherein said second mono-crystallized semiconductor layer further comprises a plurality of thermal contacts, and

wherein said thermal contacts are adapted to conduct heat but not electric current.

28. A system according to claim 23, further comprising:

a plurality of connection paths between said second transistors and said first transistors,

wherein said plurality of connection paths comprise vias through said second mono-crystallized semiconductor layer, and

wherein at least one of said vias is less than about 150 nm in diameter.

29. A system according to claim 23 wherein at least one of said second transistors is one of:

(i) a recessed-channel transistor (RCAT);

(ii) a junction-less transistor;

(iii) a replacement-gate transistor;

(iv) a thin-side-up transistor;

or

(v) a double gate transistor.

30. A system according to claim 23, further comprising:

a plurality of connection paths between said second transistors and said first transistors,

wherein at least one of said connection paths has a contact to said second transistors, and

wherein said contact is also aligned to one of said first alignment marks.