Filter design methods and filters based on metamaterial structures

• US 8,237,519 B2
• Filed: 11/17/2008
• Issued: 08/07/2012
• Est. Priority Date: 11/16/2007
• Status: Active Grant

• Current Assignee: Gula Consulting Limited Liability Company (Intellectual Ventures LLC)
• Original Assignee: Rayspan Corporation
• Inventors: Achour, Maha
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): Glenn, Kimberly
• Application Number:
  US12/272,781
• Publication Number:
  US 20090160578A1
• Time in Patent Office: 1,359 Days
• Field of Search: 333/172, 333/175, 333/204, 333/219, 333/236, 333/246, 343/700.MS
• US Class Current: 333/172
• CPC Class Codes: H01P 1/203 Strip line filters
• CPC Class Codes: H01P 1/213 combining or separating two or more different frequencies H01P1/215 takes precedence
• CPC Class Codes: H01P 3/08 Microstrips; Strip lines
• CPC Class Codes: H03H 7/01 Frequency selective two-port networks

Abstract

Filter design techniques and filters based on metamaterial structures including an extended composite left and right handed (E-CRLH) metamaterial unit cell.

Claims

1. A metamaterial structure based filter apparatus, comprising:

an unbalanced extended composite left and right handed (E-CRLH) metamaterial unit cell comprising;

a first series inductor LR and a first series capacitance CL that in combination produce a first series resonance ω

_SE,

a first shunt inductor LL and a first shunt capacitance CR that in combination produce a first shunt resonance ω

_SH,

a second series inductor LR′ and

a second series capacitance CL′

that in combination produce a second series resonance ω

_SE′

, and

a second shunt inductor LL′ and

a second shunt capacitance CR′

that in combination produce a second shunt resonance ω

_SH′

,

wherein the first series inductor LR, the first series capacitance CL, the first shunt inductor LL, the first shunt capacitance CR, the second series inductor LR′

, the second series capacitance CL′

, the second shunt inductor LL′ and

the second shunt capacitance CR′

are (1) coupled to form a symmetric cell structure for the E-CRLH unit cell where an input and an output of the E-CRLH unit cell have a common circuit structure, and (2) to have values that render ω

_SE and ω

_SH′

to be substantially equal, and ω

_SH and ω

_SE′

, to be substantially equal.

2. The apparatus as in claim 1, comprising one or more additional E-CRLH unit cells coupled to the E-CRLH unit cell.

3. The apparatus as in claim 1, comprising a low-pass filter that is coupled to the E-CRLH unit cell.

4. The apparatus as in claim 3, wherein the low-pass filter comprises the metamaterial structure.

5. The apparatus as in claim 1, comprising a high-pass filter that is coupled to the E-CRLH unit cell.

6. The apparatus as in claim 5, wherein the high-pass filter comprises the metamaterial structure.

7. The apparatus as in claim 1, wherein a ratio of LR/CR and a ratio of LL′

/CL′

are substantially equal.

8. The apparatus as in claim 1, wherein values of LR, CL, LL, CR, LR′

, CL′

, LL′

, CR′

are selected to match an input impendance and an output impedance of the apparatus.

9. The apparatus as in claim 1, wherein the series inductor LR is selected to match an input impedance and an output impedance of the apparatus.

12. The apparatus as in claim 1, wherein circuit elements in the E-CRLH unit cell comprise discrete circuit elements.

13. The apparatus as in claim 1, wherein the E-CLRH unit cell is structured to behave as a low-pass filter at a low frequency range, a high-pass filter at a high frequency range and an isolation between an upper edge of the low-pass filter and a lower edge of the high-pass filter is equal to or greater than 25 dB.

14. The apparatus as in claim 13, wherein the low-pass filter is in a frequency band 800-2170 MHz and the high-pass filter has a frequency band 2.3-6.0 GHz.

10. An apparatus comprising an unbalanced E-CRLH unit cell has a printed circuit structure formed in four separated metallization layers that are parallel to one another and comprise:

a first metallization layer of the four separated metallization layers patterned to comprise a first signal port, a first feed line coupled to the first signal port, a first launch pad coupled to the first feed line, and a first cell patch that is separated from and capacitively coupled to the first launch pad, a second cell patch spaced from the first cell patch and coupled to receive a signal from the first cell patch, a second launch pad separated from and capacitively coupled to the second cell patch, a second feed line coupled to the second launch pad, and a second signal port coupled to the second feed line;

a second metallization layer of the four separated metallization layers patterned to comprise a first conductive cell patch positioned underneath the first metallization layer between the first and second cell patches;

a third metallization layer of the four separated metallization layers patterned to comprise a second conductive cell underneath the first conductive cell patch in the second metallization layer;

a first conductive via configured to couple the first conductive cell patch in the second metallization layer and the second conductive cell patch in the third metallization layer;

a fourth metallization layer of the four separated metallization layers to provide a ground electrode for the apparatus;

a first cell via configured to couple the first cell patch on the first metallization layer and the ground electrode in the fourth metallization layer, the first cell via being separate from and without direct contact with the first and second conductive cell patches; and

a second cell via configured to couple the second cell patch on the first metallization layer and the ground electrode in the fourth metallization layer, the second cell via being separate from and without direct contact with the first and second conductive cell patches.

11. The apparatus as in claim 10, wherein:

the first metallization layer is patterned to comprise a first top ground electrode adjacent to the first launch pad and a second top ground electrode adjacent to the second launch pad;

the second metallization layer is patterned to comprise a first bottom ground electrode underneath the first top ground electrode and a second bottom ground electrode underneath the second top ground electrode,

the first top ground electrode is patterned to support, in combination with the first bottom ground electrode, a first co-planar waveguide (CPW) that is coupled between the first signal port and the first feed line, and

the second top ground electrode is patterned to support, in combination with the second bottom ground electrode, a second co-planar waveguide (CPW) that is coupled between the second signal port and the second feed line.

15. A filter apparatus comprising:

an unbalanced E-CRLH unit-cell structure formed from a non-linear combination of a Conventional CRLH (C-CRLH) cell and a Dual CRLH (D-CRLH) cell;

a combination of a first series inductor LR and a first series capacitance CL of the C-CRLH cell producing a first series resonance ω

_SE,

a combination of a first shunt inductor LL and a first shunt capacitance CR of the C-CRLH cell producing a first shunt resonance ω

_SH;

a combination of a second series inductor second LR′ and

a second series capacitance CL′

of the D-CRLH cell producing a second series resonance ω

_SE′ and

a combination of a second shunt inductor LL′ and

a second shunt capacitance CR′

of the D-CRLH cell producing a second shunt resonance ω

_SH′

, wherein ω

_SE and ω

_SH′

are substantially equal and ω

_SH′ and

ω

_SE′

are substantially equal.

16. The filter apparatus of claim 15, wherein LR/CR and LL′

/CL′

are substantially equal.

17. The filter apparatus of claim 15, wherein LR, CL, LL, CR, LR′

, CL′

, LL′

, CR′ and

a combination thereof are adjusted to match an input and an output impedance of the filter.

18. The filter apparatus of claim 15, wherein the series inductor LR is adjusted to match an input and an output impedance of the filter.

19. The filter apparatus of claim 15, wherein the unit-cell structure comprises a plurality of E-CRLH unit-cell structures.

20. The filter apparatus of claim 15, wherein the E-CRLH unit-cell is coupled a low-pass filter.

21. The filter apparatus of claim 15, wherein the E-CRLH unit-cell is coupled a high-pass filter.

22. The filter apparatus of claim 15, wherein the series inductor LR, the series capacitance CL, the shunt inductor LL, the shunt capacitance CR, the series inductor LR′

, the series capacitance CL′

, the shunt inductor LL′ and

the shunt capacitance CR′

of the E-CRLH unit-cell are arranged and coupled to form a symmetric cell structure for the E-CRLH cell where an input and an output of the E-CRLH cell have a common circuit structure.

23. A filter apparatus comprising:

an unbalanced C-CRLH unit-cell structure comprised of a plurality of Conventional CRLH (C-CRLH) cells having a first CRLH (C-CRLH) cell coupled to a second CRLH (C-CRLH) cell;

a combination of a first series inductor LR1 and a first series capacitance CL1 of the first CRLH (C-CRLH) cell which produces a first series resonance ω

_SE1;

a combination of a first shunt inductor LL1 and a first shunt capacitance CR1 of the first CRLH (C-CRLH) cell which produces a first shunt resonance ω

_SH1;

a combination of a second series inductor LR2 and a second series capacitance CL2 of the second CRLH (C-CRLH) cell which produces a second series resonance ω

_SE2; and

a combination of a second shunt inductor LL2 and a second shunt capacitance CR2 of the second CRLH (C-CRLH) which produces a second shunt resonance ω

_SH2, wherein ω

_SE1 and ω

_SE2 are substantially equal, and ω

_SH1 and ω

_SH2 are substantially equal.

24. The filter apparatus of claim 23, wherein LR1, CL1, LL1, CR1, LR2, CL2, LL2, CR2, and a combination thereof are adjusted to match an input and an output impedance of the filter.

25. The filter apparatus of claim 23, wherein LR1 and LR2 parameters are adjusted to match an input and an output impedance of the filter.

26. The filter apparatus of claim 23, wherein the Conventional CRLH (C-CRLH) cell structure is coupled to a low-pass filter.

27. The filter apparatus of claim 23, wherein Conventional CRLH (C-CRLH) cell structure is coupled to a high-pass filter.

28. A fully printed extended composite left and right handed (E-CRLH) metamaterial structure, comprising:

a first metallization layer patterned to comprise a first signal port, a first feed line coupled to the first signal port, a first launch pad coupled to the first feed line, and a first cell patch that is separated from and capacitively coupled to the first launch pad, a second cell patch spaced from the first cell patch and coupled to receive a signal from the first cell patch, a second launch pad separated from and capacitively coupled to the second cell patch, a second feed line coupled to the second launch pad, and a second signal port coupled to the second feed line;

a second metallization layer patterned to comprise a first conductive cell patch positioned underneath the first metallization layer between the first and second cell patches;

a third metallization layer patterned to comprise a second conductive cell underneath the first conductive cell patch in the second metallization layer;

a first conductive via configured to couple the first conductive cell patch in the second metallization layer and the second conductive cell patch in the third metallization layer;

a fourth metallization layer to provide a ground electrode for the apparatus;

a first cell via configured to couple the first cell patch on the first metallization layer and the ground electrode in the fourth metallization layer, the first cell via being separate from and without direct contact with the first and second conductive cell patches; and

a second cell via configured to couple the second cell patch on the first metallization layer and the ground electrode in the fourth metallization layer, the second cell via being separate from and without direct contact with the first and second conductive cell patches.

29. A printed conventional composite left and right handed (C-CRLH) structure, comprising:

a top layer having a plurality of CPW feed lines, a top ground, and a plurality of ports;

a first dielectric substrate having a first surface on a first side and a second surface on a second side opposing the first side, wherein the first surface of the first substrate is attached to the top layer;

a second layer having a top metal-insulator-metal (MIM) layer, wherein the second layer is attached to the second surface of the first substrate, wherein a first set of cell conductive via connectors are formed in the first substrate creating a conductive path from the top layer to the second layer;

a second dielectric substrate having a first surface on a first side and a second surface on a second side opposing the first side, wherein the first surface of the second substrate is attached to the second layer;

a third layer having a main structure, wherein the third layer is attached to the second surface of the second substrate, wherein a second set of cell conductive via connectors are formed in the second substrate creating a conductive path from the second layer to the third layer;

a third dielectric substrate having a first surface on a first side and a second surface on a second side opposing the first side, wherein the first surface of the third substrate is attached to the third layer;

a fourth layer having a bottom MIM layer, wherein the fourth layer is attached to the second surface of the third substrate;

a fourth dielectric substrate having a first surface on a first side and a second surface on a second side opposing the first side, wherein the first surface of the fourth substrate is attached to the fourth layer; and

a fifth layer having a bottom ground, wherein the fifth layer is attached to the second surface of the fourth substrate, wherein the top layer, the top, second, third, fourth, and fifth layer, the first, second, third, fourth, and fifth substrate, the cell conductive via connectors, the top MIM layer, the main structure, and the bottom MIM layer are structured to form a printed C-CRLH structure.

30. The structure as in claim 29, wherein the third layer is patterned to comprise a first cell patch, a first launch pad separated from and capacitively coupled to the first cell patch, a first feed line coupled to the first cell patch, a second cell patch, a second launch pad separated from and capacitively coupled to the first cell patch.

31. The structure as in claim 30, wherein each of the first cell patch and the second cell patch comprises a first cell patch part, a separate cell patch part and a conductor line configured to couple the first and the second cell patch parts wherein each of the first cell patch and the second cell patches comprises a first cell patch part, a second cell patch part, a separate cell patch part and a conductor line configured to couple the parts of the first and second cell patches.

32. A method, comprising:

forming circuit elements of an unbalanced E-CRLH metamaterial unit cell, including;

providing a first series inductor LR and a first series capacitance CL that in combination produce a first series resonance ω

_SE;

providing a first shunt inductor LL and a first shunt capacitance CR that in combination produce a first shunt resonance ω

_SH;

providing a second series inductor LR′ and

a second series capacitance CL′

that in combination produce a second series resonance ω

_SE′

; and

providing a second shunt inductor LL′ and

a second shunt capacitance CR′

that in combination produce a second shunt resonance ω

_SH′

; and

wherein the first series inductor LR, the first series capacitance CL, the first shunt inductor LL, the first shunt capacitance CR, the second series inductor LR′

, the second series capacitance CL′

, the second shunt inductor LL′ and

the second shunt capacitance CR′

are (1) coupled to form a symmetric cell structure for the ECRLH unit cell where an input and an output of the E-CRLH unit cell have a common circuit structure, and (2) to have values that render ω

_SE and ω

_SH′

to be substantially equal, and ω

_SH and ω

_SE′

to be substantially equal.

33. The method of claim 32, comprising:

forming one or more additional E-CRLH metamaterial unit cells; and

coupling the one or more additional E-CRLH metamaterial unit cells to the E-CRLH metamaterial unit cell.

34. The method of claim 32, comprising:

forming a low-pass filter; and

coupling the low-pass filter to the E-CRLH unit cell.

35. The method of claim 32, comprising:

forming a high-pass filter; and

coupling the high-pass filter to the E-CRLH unit cell.

38. The method of claim 32, comprising forming the circuit elements in the E-CRLH unit cell using discrete circuit elements.

39. The method of claim 32, comprising forming an E-CRLH metamaterial unit cell configured as a low-pass filter at a low frequency range, a high-pass filter at a high frequency range, and including an isolation between an upper edge of the low-pass filter and a lower edge of the high-pass filter is equal to or greater than 25 dB.

40. The method of claim 39, comprising forming an E-CRLH metamaterial unit cell wherein the low-pass filter has a frequency band 800-2170 MHz, and the high-pass filter has a frequency band 2.3-6.0 GHz.

36. A method comprising:

forming an unbalanced E-CRLH unit includes forming a printed circuit structure formed in four separated metallization layers that are parallel to one another, the forming the printed circuit structure including;

providing a first metallization layer of the four separated metallization layers patterned to comprise a first signal port, a first feed line coupled to the first signal port, a first launch pad coupled to the first feed line, and a first cell patch that is separated from and capacitively coupled to the first launch pad, a second cell patch spaced from the first cell patch and coupled to receive a signal from the first cell patch, a second launch pad separated from and capacitively coupled to the second cell patch, a second feed line coupled to the second launch pad, and a second signal port coupled to the second feed line;

providing a second metallization layer of the four separated metallization layers patterned to comprise a first conductive cell patch positioned underneath the first metallization layer between the first and second cell patches;

providing a third metallization layer of the four separated metallization layers patterned to comprise a second conductive cell underneath the first conductive cell patch in the second metallization layer;

providing a first conductive via configured to couple the first conductive cell patch in the second metallization layer and the second conductive cell patch in the third metallization layer;

providing a fourth metallization layer of the four separated metallization layers to provide a ground electrode for the apparatus;

providing a first cell via configured to couple the first cell patch on the first metallization layer and the ground electrode in the fourth metallization layer, the first cell via being separate from and without direct contact with the first and second conductive cell patches; and

providing a second cell via configured to couple the second cell patch on the first metallization layer and the ground electrode in the fourth metallization layer, the second cell via being separate from and without direct contact with the first and second conductive cell patches.

37. The method of claim 36, wherein the first metallization layer is patterned to comprise a first top ground electrode adjacent to the first launch pad and a second top ground electrode adjacent to the second launch pad;

wherein the second metallization layer is patterned to comprise a first bottom ground electrode underneath the first top ground electrode and a second bottom ground electrode underneath the second top ground electrode,

wherein the first top ground electrode is patterned to support, in combination with the first bottom ground electrode, a first co-planar waveguide (CPW) that is coupled between the first signal port and the first feed line, and

wherein the second top ground electrode is patterned to support, in combination with the second bottom ground electrode, a second co-planar waveguide (CPW) that is coupled between the second signal port and the second feed line.

41. A method, comprising:

forming an unbalanced Conventional CRLH (C-CRLH) cell and a Dual CRLH (D-CRLH) cell to establish an E-CRLH unit-cell structure, including;

providing a combination of a first series inductor LR and a first series capacitance CL of the C-CRLH cell producing a first series resonance ω

_SE;

providing a combination of a first shunt inductor LL and a shunt capacitance CR of the C-CRLH cell producing a first shunt resonance ω

_SH;

providing a combination of a secondseries inductor LR′ and

a second series capacitance CL′

of the D-CRLH cell producing a second series resonance ω

_SE′

; and

providing a combination of a second shunt inductor LL′ and

a second shunt capacitance CR′

of the D-CRLH cell producing a second shunt resonance ω

_SH′

, wherein ω

_SE and ω

_SH′

are substantially equal and ω

_SH and ω

_SE′

are substantially equal.

42. The method of claim 41, wherein the series inductor LR, the series capacitance CL, the shunt inductor LL, the shunt capacitance CR, the series inductor LR′

, the series capacitance CL′

, the shunt inductor LL′ and

the shunt capacitance CR′

of the E-CRLH unit-cell are arranged and coupled to form a symmetric cell structure for the E-CRLH cell where an input and an output of the E-CRLH cell have a common circuit structure.