Semiconductor member, semiconductor article manufacturing method, and LED array using the manufacturing method

• US 8,237,761 B2
• Filed: 10/25/2007
• Issued: 08/07/2012
• Est. Priority Date: 10/27/2006
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Yonehara, Takao, Yamagata, Kenji, Sekiguchi, Yoshinobu, Nishi, Kojiro
• Primary Examiner(s): Pham, Hai C
• Application Number:
  US12/442,902
• Publication Number:
  US 20100026779A1
• Time in Patent Office: 1,748 Days
• Field of Search: 347/238, 347/224, 347/225, 438/34, 438/455, 438/456, 438/459, 438/460, 438/462, 438/690, 438/29, 438/42, 438/458, 438/689, 257/84, 257/88, 257/256, 257/288, 257/79, 257/622
• US Class Current: 347/238
• CPC Class Codes: B41J 2/45 using light-emitting diode [LED] or laser arrays
• CPC Class Codes: H01L 21/7806 involving the separation of the active layers from a substrate
• CPC Class Codes: H01L 21/784 the substrate being a semiconductor body
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

Claims

1. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate, comprising the steps of:

preparing a first structure comprising a first semiconductor substrate, a compound semiconductor multilayer film, and an etching sacrificial layer provided between the first semiconductor substrate and the compound semiconductor multilayer film, wherein a first groove is formed in the compound semiconductor multilayer film so as to expose the etching sacrificial layer, and wherein the first semiconductor substrate is a compound semiconductor substrate;

preparing a second structure comprising a second semiconductor substrate and an insulating layer, wherein a second groove is formed so as to pass through the second semiconductor substrate;

bonding the first and second structures so as to form a bonded member in which the first and second grooves are connected to each other; and

bringing an etchant into contact with the etching sacrificial layer through the connected first and second grooves and thus etching the etching sacrificial layer to separate the first semiconductor substrate from the bonded member.

2. A method of manufacturing a semiconductor article according to claim 1, wherein an etching stop layer for stopping etching of the first semiconductor substrate by the etchant is provided between the first semiconductor substrate and the etching sacrificial layer.

3. A method of manufacturing a semiconductor article according to claim 2, wherein the etching stop layer, the etching sacrificial layer, and the compound semiconductor multilayer film are alternately repeatedly laminated on the first semiconductor substrate.

4. A method of manufacturing a semiconductor article according to claim 1, wherein a third groove connected to the first groove and the second groove is provided in the insulating film.

5. A method of manufacturing a semiconductor article according to claim 1, wherein one of an insulating layer and a circuit layer is provided on a surface of the second semiconductor substrate on the side of the insulating film.

6. A method of manufacturing a semiconductor article according to claim 1, wherein the etching sacrificial layer and the compound semiconductor multilayer film are alternately repeatedly laminated on the first semiconductor substrate.

7. A method of manufacturing a semiconductor article according to claim 1, wherein at least one of a metal film and a DBR mirror is provided between the compound semiconductor multilayer film and the insulating film.

8. A method of manufacturing a semiconductor article according to claim 1 wherein the insulating film is of a polyimide insulating material.

9. A method of manufacturing a semiconductor article according to claim 1, wherein the second semiconductor substrate comprises a driver circuit for driving a light-emitting device formed so as to include the compound semiconductor multilayer film.

10. A method of manufacturing a semiconductor article according to claim 1,

wherein the first groove is provided in the compound semiconductor multilayer film such that the compound semiconductor multilayer film is divided in an island shape, and

wherein the method further comprises a step of forming a light-emitting device using the compound semiconductor multilayer film on the second semiconductor substrate.

11. A method of manufacturing a semiconductor article according to claim 10, wherein the island-shaped compound semiconductor multilayer film formed on the first semiconductor substrate surrounded by the first groove has a rectangle shape having a long side and a short side, and a plurality of the second grooves passing through the second semiconductor substrate are intermittently disposed in an array in parallel with the direction of the long side (longitudinal direction) thereof.

12. A method of manufacturing a semiconductor article according to claim 10, further comprising the steps of:

forming an electrode on the island-shaped compound semiconductor multilayer film via an insulating member to form a light-emitting device array chip having a long side direction and a short side direction, after separating the first semiconductor substrate from the bonded member; and

cutting the second semiconductor substrate in a direction of the long side so that the second grooves in parallel with one another which are provided in the second semiconductor substrate and are arranged in the direction of the short side are connected to each other.

13. A method of manufacturing a semiconductor article according to claim 1,

wherein:

the compound semiconductor multilayer film comprises a light-emitting layer;

the first structure further comprises a DBR layer formed on the compound semiconductor multilayer film;

the light-emitting layer is divided into an array of a plurality of light-emitting portions; and

a semiconductor circuit is formed on the second semiconductor substrate, and

wherein the method further comprises a step of electrically connecting the plurality of light-emitting portions with an electrode portion of the semiconductor circuit for controlling light emission of the light-emitting portions.

14. A method of manufacturing a semiconductor article according to claim 1, wherein the top view of the shape of the compound semiconductor multilayer film patterned in an island shape by the first groove is a rectangle having a long side direction and a short side direction, and wherein a plurality of the second grooves passing through the second semiconductor substrate is formed so as to be in parallel in the direction of the long side to thereby form a passing-through groove group in the direction of the long side, in which a plurality of the passing-through groove groups in the direction of the long side is arranged so as to be in parallel with one another at intervals which are equal to or longer than the length of the short side of the island-shaped compound semiconductor multilayer film.

15. A method of manufacturing a semiconductor article according to claim 1, wherein a reflector is provided between the compound semiconductor multilayer film and the second semiconductor substrate.

16. A method of manufacturing a light-emitting device comprising the steps of:

forming a separation layer and a light-emitting layer on a first substrate in the stated order from the side of the first substrate;

bonding the first substrate to a second substrate such that the light-emitting layer is positioned inside to form a bonded member; and

transferring the light-emitting layer onto the second substrate by etching and removing the separation layer,

wherein a pair of the separation layer and the light-emitting layer on the first substrate is repeatedly deposited n times, the n being a natural number of two or more, only the uppermost light-emitting layer is patterned into a shape of a plurality of islands, and then the first substrate is bonded to the second substrate to form the bonded member, and

wherein an etchant is caused to penetrate into a space which is formed in the bonded member by the island-shape patterning, thereby bringing the separation layer into contact with the etchant to selectively transfer the island-shaped light-emitting layer onto the second substrate.