Word line drivers in non-volatile memory device and method having a shared power bank and processor-based systems using same
First Claim
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1. A method of applying a voltage on a word line of an array of non-volatile memory cells in a non-volatile memory device, the method comprising:
- selecting one of at least two voltages to provide as an output signal depending upon the nature of an operation being performed by the non-volatile memory device; and
selectively applying the output signal to the word line in the non-volatile memory device.
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Abstract
A word line driver system that utilizes a voltage selection circuit to supply one of several voltages to an output node coupled to a plurality of word line control circuits. Each word line control circuit is coupled to a respective word line in an array of non-volatile memory cells. The voltage selection circuit may include selectable low pass filters for filtering the supplied voltage supplied to the word lines in the array of memory cells without significantly increasing the overall die-size of the device.
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Citations
20 Claims
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1. A method of applying a voltage on a word line of an array of non-volatile memory cells in a non-volatile memory device, the method comprising:
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selecting one of at least two voltages to provide as an output signal depending upon the nature of an operation being performed by the non-volatile memory device; and selectively applying the output signal to the word line in the non-volatile memory device. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of applying a voltage on a word line of an array of non-volatile memory cells in a non-volatile memory, the method comprising:
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filtering a voltage to generate a filtered output voltage signal; and selectively applying the filtered output voltage to the word line in the non-volatile memory device. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of applying a voltage on a word line of an array of non-volatile memory cells in a non-volatile memory device, the method comprising:
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selecting a voltage from a range of voltage levels to be provided to a plurality of word lines, the word line included in the plurality of word lines, the voltage selected based at least in part on the nature of a memory operation performed; selectively applying the provided voltage to the word line. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification