Non-volatile memory device having temperature compensator and memory system thereof
First Claim
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1. A semiconductor memory device comprising:
- a voltage generator adjusting a DC voltage supplied into the semiconductor memory device according to a current temperature; and
a control logic activating a temperature detection operation of the voltage generator and an adjustment operation of the DC voltage according to an operation mode including at least one of program, read and erase modes;
wherein the voltage generator adjusts the DC voltage according to the operation mode and offset information about the semiconductor memory device.
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Abstract
Provided is a semiconductor memory device. The semiconductor memory device includes: a voltage generator adjusting a DC voltage supplied into the semiconductor memory device according to a current temperature; and a control logic activating a temperature detection operation of the voltage generator and an adjustment operation of the DC voltage according to an operation mode, wherein the voltage generator adjusts the DC voltage according to offset information about the semiconductor memory device.
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Citations
10 Claims
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1. A semiconductor memory device comprising:
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a voltage generator adjusting a DC voltage supplied into the semiconductor memory device according to a current temperature; and a control logic activating a temperature detection operation of the voltage generator and an adjustment operation of the DC voltage according to an operation mode including at least one of program, read and erase modes; wherein the voltage generator adjusts the DC voltage according to the operation mode and offset information about the semiconductor memory device. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of controlling a semiconductor memory device, the method comprising:
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receiving a command from an external; adjusting DC voltages consumed during a plurality of operation procedures constituting an operation mode corresponding to the command with reference to a current temperature and a offset value in each device, the operation mode including at least one of program, read and erase modes; and performing the plurality of operation procedures according to the adjusted DC voltages; wherein the adjusting of the DC voltages comprises generating a temperature code with reference to at least one of the operation mode, the current temperature, and the temperature offset value. - View Dependent Claims (8, 9)
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10. A memory system comprising:
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a plurality of semiconductor memory devices; and a memory controller controlling the plurality of semiconductor memory devices; wherein each of the semiconductor memory devices comprises; a temperature detector measuring a current temperature and outputting the measured current temperature as a temperature code; a voltage generator adjusting a DC voltage supplied into the semiconductor memory device according to the temperature code; and a control logic activating a temperature detection operation of the temperature detector and an adjustment operation of the DC voltage according to an operation mode including at least one of program, read and erase modes; wherein the voltage generator adjusts the DC voltage by code operation with the temperature code and an offset code; and wherein the offset code corresponds to the operation mode of the semiconductor memory device.
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Specification