Moisture barrier coatings for organic light emitting diode devices

• US 8,241,713 B2
• Filed: 02/21/2007
• Issued: 08/14/2012
• Est. Priority Date: 02/21/2007
• Status: Active Grant

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: David, Moses M., McCormick, Fred B., Roehrig, Mark A.
• Primary Examiner(s): BURKHART, ELIZABETH A
• Application Number:
  US11/677,327
• Publication Number:
  US 20080196664A1
• Time in Patent Office: 2,001 Days
• Field of Search: 427/249.7, 427/569, 427/578
• US Class Current: 427/578
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations

Abstract

A process for fabricating an amorphous diamond-like film layer for protection of a moisture or oxygen sensitive electronic device is described. The process includes forming a plasma from silicone oil, depositing an amorphous diamond-like film layer from the plasma, and

combining the amorphous diamond-like film layer with a moisture or oxygen sensitive electronic device to form a protected electronic device. Articles including the amorphous diamond-like film layer on an organic electronic device are also disclosed.

Claims

1. A process for fabricating an amorphous diamond-like film layer for protection of a moisture or oxygen sensitive organic light emitting diode, comprising:

forming a plasma at a pressure of 5-20 mTorr from vaporized silicone oil to decompose the silicone oil and form free radical species;

reacting the free radical species at the surface of the organic light emitting diode to deposit an amorphous diamond-like plasma polymerized film layer from the plasma onto the moisture or oxygen sensitive organic light emitting diode thereby forming a protected organic light emitting diode.

2. A process according to claim 1, wherein the plasma is an ion enhanced plasma formed with a radio frequency power source.

3. A process according to claim 1, wherein the forming step comprises forming a plasma from a silane source and silicone oil.

4. A process according to claim 3, wherein the depositing step comprises depositing an amorphous diamond-like film layer from the plasma, the amorphous diamond-like film layer comprises two or more layers of amorphous diamond-like film.

5. A process according to claim 1, wherein the depositing step comprises depositing an amorphous diamond-like film layer from the plasma on a flexible film comprising a polymeric or metallic material.

6. A process according to claim 1, comprising encapsulating the moisture or oxygen sensitive organic light emitting diode with the amorphous diamond-like film layer to form a protected organic light emitting diode.

7. A process according to claim 1, further comprising disposing a polymer layer between the moisture or oxygen sensitive organic light emitting diode and the amorphous diamond-like film layer.

8. A process according to claim 1, wherein the depositing step forms an amorphous diamond-like layer having a thickness in a range from 1000 to 25000 Angstroms.

9. A process according to claim 1, wherein the forming step comprises forming a plasma from tetramethylsilane, silicone oil and one or more of oxygen, nitrogen, argon, or ammonia.

10. A process according to claim 1, further comprising disposing a polymer layer on the amorphous diamond-like film layer.

11. A process according to claim 1, further comprising disposing a polymer layer between the moisture or oxygen sensitive organic light emitting diode- and the amorphous diamond-like film layer and disposing a second polymer layer on the amorphous diamond-like film layer.

12. A process according to claim 1 wherein the depositing is carried out under a negative self-bias potential of greater than 500 Volts.