UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
First Claim
Patent Images
1. A method of forming a semiconductor device, comprising:
- depositing an etch stop film on a top surface of a substrate;
exposing the top surface of the substrate to ultra-violet (UV) radiation such that the etch properties of the etch stop film are modified; and
,depositing a dielectric layer on the etch stop film, wherein the UV exposure occurs after the dielectric film is deposited on the etch stop film such that the UV radiation is applied to modify the etch stop film indirectly through the dielectric layer and wherein UV radiation is effective to remove Si—
H bonds within the etch stop film.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for the ultraviolet (UV) treatment of etch stop and hard mask film increases etch selectivity and hermeticity by removing hydrogen, cross-linking, and increasing density. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing an etch stop film or a hard mask film on a substrate and exposing the film to UV radiation and optionally thermal energy. The UV exposure may be direct or through another dielectric layer.
560 Citations
20 Claims
-
1. A method of forming a semiconductor device, comprising:
-
depositing an etch stop film on a top surface of a substrate; exposing the top surface of the substrate to ultra-violet (UV) radiation such that the etch properties of the etch stop film are modified; and
,depositing a dielectric layer on the etch stop film, wherein the UV exposure occurs after the dielectric film is deposited on the etch stop film such that the UV radiation is applied to modify the etch stop film indirectly through the dielectric layer and wherein UV radiation is effective to remove Si—
H bonds within the etch stop film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method of forming a semiconductor device, comprising:
-
depositing a first dielectric layer on a top surface of a substrate; depositing a hard mask film on the first dielectric layer; depositing a second dielectric layer on the hard mask; and exposing the top surface of the substrate to ultra-violet (UV) radiation such that the etch properties of the hard mask film are modified, wherein the UV exposure occurs after the second dielectric film is deposited on the hard mask film such that the UV radiation is applied to modify the hard mask film indirectly through the second dielectric layer and wherein the UV radiation is effective to remove Si—
H bonds within the film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification