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Soldering method and related device for improved resistance to brittle fracture with an intermetallic compound region coupling a solder mass to an Ni layer which has a low concentration of P, wherein the amount of P in the underlying Ni layer is controlled as a function of the expected volume of the solder mass

  • US 8,242,378 B2
  • Filed: 09/21/2007
  • Issued: 08/14/2012
  • Est. Priority Date: 09/21/2007
  • Status: Active Grant
First Claim
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1. An electronic device comprising:

  • a core layer;

    a nickel layer disposed over at least a portion of the core layer;

    a solder mass disposed over at least a portion of the nickel layer; and

    an intermetallic compound region coupling the solder mass to the nickel layer, the intermetallic compound region devoid of an effective nickel-phosphorus layer and having no more than 5000 parts per million of phosphorus by weight;

    wherein the nickel layer contains an amount of phosphorous controlled as a function of an expected size of the solder mass.

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