Thin film transistor and electronic apparatus
First Claim
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1. A thin film transistor comprising:
- an insulating layer formed from an organic material, an oxide material, or a silicon based material;
a source electrode and a drain electrode disposed on the insulating layer, each of the source electrode and drain electrode including an oxide material layer including an electrically conductive oxide material;
a self-organized film covering exposed surfaces of the insulating layer, and exposed surfaces of the oxide material layers of the source electrode and the drain electrode; and
a semiconductor thin film disposed on the self-organized film, the source electrode, and the drain electrode.
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Abstract
A thin film transistor includes an insulating layer formed from an organic material, an oxide material, or a silicon based material, a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material, a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode, and a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.
28 Citations
6 Claims
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1. A thin film transistor comprising:
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an insulating layer formed from an organic material, an oxide material, or a silicon based material; a source electrode and a drain electrode disposed on the insulating layer, each of the source electrode and drain electrode including an oxide material layer including an electrically conductive oxide material; a self-organized film covering exposed surfaces of the insulating layer, and exposed surfaces of the oxide material layers of the source electrode and the drain electrode; and a semiconductor thin film disposed on the self-organized film, the source electrode, and the drain electrode. - View Dependent Claims (2, 3, 4, 5)
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6. An electronic apparatus comprising a thin film transistor including:
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an insulating layer formed from an organic material, an oxide material, or a silicon based material; a source electrode and a drain electrode disposed on the insulating layer, each of the source electrode and drain electrode including an oxide material layer including an electrically conductive oxide material; a self-organized film covering exposed surfaces of the insulating layer, and exposed surfaces of the oxide material layers of the source electrode and the drain electrode; and a semiconductor thin film disposed on the self-organized film, the source electrode, and the drain electrode.
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Specification