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Thin film transistor and electronic apparatus

  • US 8,242,501 B2
  • Filed: 10/01/2009
  • Issued: 08/14/2012
  • Est. Priority Date: 10/03/2008
  • Status: Expired due to Fees
First Claim
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1. A thin film transistor comprising:

  • an insulating layer formed from an organic material, an oxide material, or a silicon based material;

    a source electrode and a drain electrode disposed on the insulating layer, each of the source electrode and drain electrode including an oxide material layer including an electrically conductive oxide material;

    a self-organized film covering exposed surfaces of the insulating layer, and exposed surfaces of the oxide material layers of the source electrode and the drain electrode; and

    a semiconductor thin film disposed on the self-organized film, the source electrode, and the drain electrode.

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