Display device
First Claim
1. A display device, wherein a transparent oxide layer and a semiconductor layer, either of which is taken as an upper layer, are formed on a pixel region on a substrate, and an insulating film and a conductive layer are sequentially stacked thereon, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, an opening portion or a notched portion is formed in a region of the transparent oxide layer corresponding to at least a channel region portion directly below the gate electrode and the transparent oxide layer is converted into an electrically conductive layer, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive layer, and the semiconductor layer is formed in the opening portion or the notched portion of the transparent oxide layer and is connected to the source region portion and the drain region portion.
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Accused Products
Abstract
A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
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Citations
9 Claims
- 1. A display device, wherein a transparent oxide layer and a semiconductor layer, either of which is taken as an upper layer, are formed on a pixel region on a substrate, and an insulating film and a conductive layer are sequentially stacked thereon, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, an opening portion or a notched portion is formed in a region of the transparent oxide layer corresponding to at least a channel region portion directly below the gate electrode and the transparent oxide layer is converted into an electrically conductive layer, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive layer, and the semiconductor layer is formed in the opening portion or the notched portion of the transparent oxide layer and is connected to the source region portion and the drain region portion.
Specification