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Semiconductor light emitting device with light extraction structures

  • US 8,242,521 B2
  • Filed: 06/16/2011
  • Issued: 08/14/2012
  • Est. Priority Date: 12/19/2007
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region; and

    a plurality of cavities extending into the semiconductor structure, wherein the cavities are configured to reflect light incident on the interface at angles greater than 70°

    relative to a normal to a major plane of the light emitting layer.

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