Semiconductor light emitting device with light extraction structures

• US 8,242,521 B2
• Filed: 06/16/2011
• Issued: 08/14/2012
• Est. Priority Date: 12/19/2007
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.), Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: David, Aurelien J. F., Choy, Henry Kwong-Hin, Wierer, Jonathan J. Jr.
• Primary Examiner(s): ZARNEKE, DAVID A
• Application Number:
  US13/161,541
• Publication Number:
  US 20110241056A1
• Time in Patent Office: 425 Days
• Field of Search: 257/95, 257/103
• US Class Current: 257/95
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

Claims

1. A device comprising:

a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region; and

a plurality of cavities extending into the semiconductor structure, wherein the cavities are configured to reflect light incident on the interface at angles greater than 70°

relative to a normal to a major plane of the light emitting layer.

2. The device of claim 1 further comprising a reflective metal contact disposed on a bottom side of the semiconductor structure, wherein the plurality of cavities extend from the bottom side of the semiconductor structure toward a top side of the semiconductor structure.

3. The device of claim 1 further comprising a reflective metal contact disposed on a bottom side of the semiconductor structure, wherein the plurality of cavities extend from a top side of the semiconductor structure toward the bottom side of the semiconductor structure.

4. The device of claim 1 wherein the cavities are configured such that a photon traveling within the semiconductor structure cannot travel further than 50 μ

m before interacting with a cavity.

5. The device of claim 1 wherein the cavities have sidewalls oriented at an angle between 35 and 55°

relative to a major surface of the light emitting layer.

6. The device of claim 1 wherein sidewalls of the cavities are coated with a dielectric material.

7. The device of claim 1 wherein nearest neighbor cavities are spaced between 10 and 300 μ

m apart.

8. The device of claim 1 wherein at least one of the cavities is filled with metal that makes electrical contact to the n-type region.

9. The device of claim 1 wherein sidewalls of the cavities are roughened.

10. The device of claim 1 wherein:

at least one of the cavities is filled with metal; and

sidewalls of the cavity filled with metal are coated with a dielectric that electrically isolates the metal from the semiconductor structure.

11. The device of claim 1 wherein the plurality of cavities does not create electrical isolation of any portion of the device.