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Mixed-gate metal-oxide-semiconductor varactors

  • US 8,242,581 B1
  • Filed: 11/26/2008
  • Issued: 08/14/2012
  • Est. Priority Date: 11/26/2008
  • Status: Active Grant
First Claim
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1. A mixed gate metal-oxide-semiconductor varactor comprising:

  • a semiconductor region;

    a gate insulator formed on the semiconductor region; and

    at least first and second gate conductors that are formed on the gate insulator and are in contact with each other, wherein the first and second gate conductors form part of a gate structure, wherein the gate structure further comprises a layer of polysilicon formed on the first and second gate conductors that electrically couples the first and second gate conductors, and wherein the first and second gate conductors have different work functions, respectively.

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