Transformer with effective high turn ratio
First Claim
Patent Images
1. An integrated transformer comprising:
- a semiconductor substrate prepared with a dielectric layer having a plurality of intermediate coil levels between top and bottom coil levels, the coil levels are separated by dielectric material of the dielectric layer, the coil levels are disposed along a transverse direction;
a first coil element having n turns in the dielectric layer, the first coil element includestop first conductive concentric ring structures disposed in the top coil level, wherein dielectric material of the dielectric layer fills spaces between the top concentric ring structures, the top concentric ring structures include a plurality of inner top ring structures between innermost and outermost top ring structures,bottom first conductive concentric ring structures disposed in the bottom coil level, wherein dielectric material of the dielectric layer fills spaces between the bottom concentric ring structures, the bottom concentric ring structures include a plurality of inner bottom ring structures between innermost and outermost bottom ring structures,the top first concentric ring structures in the top coil level are in registration with the bottom first concentric ring structures in the bottom coil level,the top innermost ring structure of the first coil element is electrically coupled to the bottom first innermost ring structure of the first coil element and the top innermost ring structure of the first coil element is electrically coupled to the bottom innermost ring structure of the first coil element by innermost and outermost transverse connectors,the top first concentric ring structures are electrically coupled by top lateral connectors and the bottom first concentric ring structures are electrically coupled by bottom lateral connectors, wherein lateral connectors are separated from adjacent lateral connectors by dielectric material of the dielectric layer, andwherein the first top and bottom concentric ring structures form a cage like structure with perforations filled with dielectric material of the dielectric layer;
a second coil element having second concentric conductive ring structures disposed in the plurality of intermediate coil levels in registration with the inner top and inner bottom ring structures of the first coil element to form second concentric ring stack groups, the second concentric ring stack groups are enclosed within the cage like structure of the first coil element, the second concentric ring stack groups are configured to form n turns for the second coil element; and
wherein the first and second coil elements are arranged to increase mutual inductance of the coil elements in a multilateral direction to increase effective turn ratio of the integrated transformer.
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Accused Products
Abstract
Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.
20 Citations
25 Claims
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1. An integrated transformer comprising:
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a semiconductor substrate prepared with a dielectric layer having a plurality of intermediate coil levels between top and bottom coil levels, the coil levels are separated by dielectric material of the dielectric layer, the coil levels are disposed along a transverse direction; a first coil element having n turns in the dielectric layer, the first coil element includes top first conductive concentric ring structures disposed in the top coil level, wherein dielectric material of the dielectric layer fills spaces between the top concentric ring structures, the top concentric ring structures include a plurality of inner top ring structures between innermost and outermost top ring structures, bottom first conductive concentric ring structures disposed in the bottom coil level, wherein dielectric material of the dielectric layer fills spaces between the bottom concentric ring structures, the bottom concentric ring structures include a plurality of inner bottom ring structures between innermost and outermost bottom ring structures, the top first concentric ring structures in the top coil level are in registration with the bottom first concentric ring structures in the bottom coil level, the top innermost ring structure of the first coil element is electrically coupled to the bottom first innermost ring structure of the first coil element and the top innermost ring structure of the first coil element is electrically coupled to the bottom innermost ring structure of the first coil element by innermost and outermost transverse connectors, the top first concentric ring structures are electrically coupled by top lateral connectors and the bottom first concentric ring structures are electrically coupled by bottom lateral connectors, wherein lateral connectors are separated from adjacent lateral connectors by dielectric material of the dielectric layer, and wherein the first top and bottom concentric ring structures form a cage like structure with perforations filled with dielectric material of the dielectric layer; a second coil element having second concentric conductive ring structures disposed in the plurality of intermediate coil levels in registration with the inner top and inner bottom ring structures of the first coil element to form second concentric ring stack groups, the second concentric ring stack groups are enclosed within the cage like structure of the first coil element, the second concentric ring stack groups are configured to form n turns for the second coil element; and wherein the first and second coil elements are arranged to increase mutual inductance of the coil elements in a multilateral direction to increase effective turn ratio of the integrated transformer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 23)
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15. An integrated transformer comprising:
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a substrate with a dielectric layer thereon having an intermediate coil level between top and bottom coil levels; a first coil with top and bottom first conductive concentric rings in the top and bottom coil levels, the first conductive concentric rings are interconnected to form a perforated cage like structure; and a second coil with second concentric rings which form p turns, the second concentric rings are in registration with inner top and bottom first concentric rings in the intermediate coil level and are enclosed within the perforated cage like structure of the first coil to produce mutual inductance between the coils in multi-lateral directions to increase the effective turn ratio of the transformer. - View Dependent Claims (24)
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16. A method of fabricating an integrated transformer comprising:
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providing a semiconductor substrate prepared with a dielectric layer having intermediate coil levels between top and bottom coil levels along a transverse direction; forming a first coil with top and bottom first conductive concentric rings in the top and bottom coil levels, the first conductive concentric rings are interconnected to form a perforated cage like structure; and forming a second coil with second concentric rings which form p turns, the second concentric rings are in registration with inner top and bottom first concentric rings in the intermediate coil level and is enclosed within the perforated cage like structure of the first coil to produce mutual inductance between the coils in multi-lateral directions to increase the effective turn ratio of the transformer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 25)
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Specification
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Current AssigneeGlobalfoundries Singapore Pte Limited (GlobalFoundries, Inc.), Nanyang Technological University
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Original AssigneeGlobalfoundries Singapore Pte Limited (GlobalFoundries, Inc.)
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InventorsLim, Chee Chong, Chew, Kok Wai, Yeo, Kiat Seng, Lim, Suh Fei, Do, Manh Anh, Chan, Lap
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Primary Examiner(s)Mai, Anh
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Assistant Examiner(s)Hinson, Ronald
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Application NumberUS11/779,892Publication NumberTime in Patent Office1,853 DaysField of Search336/200, 336/223, 336/232US Class Current336/200CPC Class CodesH01F 17/0013 with stacked layersH01F 2017/0073 with a special conductive p...H01F 27/006 with special arrangement or...H01F 27/2804 Printed windingsH01L 2924/3011 ImpedanceY10T 29/4902 Electromagnet, transformer ...
