Liquid crystal display and method for manufacturing liquid crystal display

• US 8,243,236 B2
• Filed: 09/07/2007
• Issued: 08/14/2012
• Est. Priority Date: 10/18/2006
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hara, Yoshihito, Kikuchi, Tetsuo, Kitagawa, Hideki, Imai, Hajime, Imade, Mitsunori, Shimada, Junya
• Primary Examiner(s): Stahl, Mike
• Application Number:
  US12/446,071
• Publication Number:
  US 20100315578A1
• Time in Patent Office: 1,803 Days
• Field of Search: None
• US Class Current: 349/113
• CPC Class Codes: G02F 1/133553 Reflecting elements associated to illuminating devices G02F1/133605

Abstract

A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region for reflecting incident light toward a display surface, wherein the reflection region includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer; a plurality of recesses are formed in at least one of the metal layer, the insulating layer and the semiconductor layer; a plurality of dents are formed in the reflective layer in the reflection region according to the plurality of recesses; and a shortest distance a between edge portions of at least two of the plurality of recesses is 4 μm or less.

Claims

1. A method for manufacturing a liquid crystal display device having a reflection region for reflecting incident light toward a display surface, comprising:

a step of forming a metal layer on a substrate;

a step of forming an insulating layer on the metal layer;

a step of forming a semiconductor layer on the insulating layer; and

a step of forming a reflective layer on the semiconductor layer, wherein

a plurality of recesses are formed in at least one of the metal layer, the insulating layer and the semiconductor layer;

in the step of forming a reflective layer, a plurality of dents are formed in the reflective layer in the reflection region according to the plurality of recesses;

a shortest distance between edge portions of at least two of the plurality of recesses is 4 μ

m or less;

wherein;

in the step of forming a metal layer, photolithography technique is used to form the plurality of recesses in the metal layer and form at least one of a gate bus line and a storage capacitor line; and

a thickness of a resist film used for forming the plurality of recesses is smaller than that of a resist film used for forming at least one of the gate bus line and the storage capacitor line.

2. The manufacturing method of claim 1, wherein the shortest distance between edge portions of at least two recesses is 1 μ

m or more.

3. The manufacturing method of claim 1, wherein a maximum width of at least one of the plurality of recesses is 15 μ

m or less.

4. The manufacturing method of claim 3, wherein the maximum width of at least one recess is 2 μ

m or more.

5. The manufacturing method of claim 1, wherein a shortest distance between an edge portion of any one of the plurality of recesses and an edge portion of another recess located closest thereto is 4 μ

m or less.

6. A method for manufacturing a liquid crystal display device having a reflection region for reflecting incident light toward a display surface, comprising:

a step of forming a metal layer on a substrate;

a step of forming an insulating layer on the metal layer;

a step of forming a semiconductor layer on the insulating layer; and

a step of forming a reflective layer on the semiconductor layer, wherein

a plurality of protrusions are formed in at least one of the metal layer, the insulating layer and the semiconductor layer;

in the step of forming a reflective layer, a plurality of projections are formed in the reflective layer in the reflection region according to the plurality of protrusions;

a maximum width of at least one of the plurality of protrusions is 5 μ

m or less;

wherein;

in the step of forming a metal layer, photolithography technique is used to form the plurality of protrusions in the metal layer and form at least one of a gate bus line and a storage capacitor line; and

a thickness of a resist film used for forming the plurality of protrusions is smaller than that of a resist film used for forming at least one of the gate bus line and the storage capacitor line.

7. The manufacturing method of claim 6, wherein the maximum width of at least one protrusion is 2 μ

m or more.

8. The manufacturing method of claim 6, wherein a shortest distance between edge portions of at least two of the plurality of protrusions is 15 μ

m or less.

9. The manufacturing method of claim 8, wherein the shortest distance between edge portions of at least two protrusions is 3 μ

m or more.

10. The manufacturing method of claim 6, wherein a shortest distance between an edge portion of any one of the plurality of protrusions and an edge portion of another protrusion located closest thereto is 15 μ

m or less.