Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
First Claim
1. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory, said method comprising:
- storing data in a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said memory; and
storing data in a resistance change element electrically connected to one of said first and second regions by configuring the resistance change element in one of a plurality of resistivity states, wherein each of said resistivity states corresponds to a different data value, respectively;
wherein said capacitorless transistor and said resistance change element are included in a memory cell, said cell comprising said floating body having a first conductivity type selected from n-type conductivity type and p-type conductivity type;
first and second regions at first and second locations of said cell, said first and second regions each having a second conductivity type selected from said n-type conductivity type and said p-type conductivity type and being different from said first conductivity type;
said first and second regions being located such that at least a portion of the floating body is located between said first and second locations; and
a gate positioned between said first and second regions and adjacent said floating body region.
1 Assignment
0 Petitions
Accused Products
Abstract
Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.
-
Citations
20 Claims
-
1. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory, said method comprising:
-
storing data in a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said memory; and storing data in a resistance change element electrically connected to one of said first and second regions by configuring the resistance change element in one of a plurality of resistivity states, wherein each of said resistivity states corresponds to a different data value, respectively; wherein said capacitorless transistor and said resistance change element are included in a memory cell, said cell comprising said floating body having a first conductivity type selected from n-type conductivity type and p-type conductivity type; first and second regions at first and second locations of said cell, said first and second regions each having a second conductivity type selected from said n-type conductivity type and said p-type conductivity type and being different from said first conductivity type;
said first and second regions being located such that at least a portion of the floating body is located between said first and second locations; and
a gate positioned between said first and second regions and adjacent said floating body region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory, said method comprising:
-
storing data in a capacitorless transistor of a memory cell having a floating body configured to store data as charge therein when power is applied to said memory; and transferring data stored in said capacitorless transistor to a resistance change element in response to discontinuance of power to said memory cell, wherein said resistance change element is included in said memory cell.
-
Specification