Narrow-band tunable radio frequency (RF) power amplifiers and related methods

• US 8,244,194 B2
• Filed: 07/08/2010
• Issued: 08/14/2012
• Est. Priority Date: 07/08/2010
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Javelin Semiconductor, Inc. (Broadcom, Inc.)
• Inventors: Morgan, Patrick N., Dupuis, Timothy J., Bockelman, David E.
• Primary Examiner(s): Trinh, Sonny
• Application Number:
  US12/803,884
• Publication Number:
  US 20120009889A1
• Time in Patent Office: 768 Days
• Field of Search: 455/188.1, 455/150.1, 455/180.1, 455/194.2, 455/552.1, 455/333, 330/151, 330/136
• US Class Current: 455/188.1
• CPC Class Codes: H03F 2200/408 the output amplifying stage of an amplifier comprising three power stages
• CPC Class Codes: H03F 2200/411 the output amplifying stage of an amplifier comprising two power stages
• CPC Class Codes: H03F 2200/414 A switch being coupled in the output circuit of an amplifier to switch the output on/off
• CPC Class Codes: H03F 2200/417 A switch coupled in the output circuit of an amplifier being controlled by a circuit
• CPC Class Codes: H03F 2200/421 Multiple switches coupled in the output circuit of an amplifier are controlled by a circuit
• CPC Class Codes: H03F 2200/534 Transformer coupled at the input of an amplifier
• CPC Class Codes: H03F 2200/537 A transformer being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/541 Transformer coupled at the output of an amplifier
• CPC Class Codes: H03F 2203/45544 the IC comprising one or more capacitors, e.g. coupling capacitors
• CPC Class Codes: H03F 2203/45551 the IC comprising one or more switched capacitors
• CPC Class Codes: H03F 2203/45554 the IC comprising one or more coils
• CPC Class Codes: H03F 2203/45631 the LC comprising one or more capacitors, e.g. coupling capacitors
• CPC Class Codes: H03F 2203/45634 the LC comprising one or more switched capacitors
• CPC Class Codes: H03F 2203/45638 the LC comprising one or more coils
• CPC Class Codes: H03F 2203/45641 the LC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
• CPC Class Codes: H03F 2203/45662 the LC comprising inductive coupled loading elements
• CPC Class Codes: H03F 2203/45726 the LC comprising more than one switch, which are not cross coupled
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/24 of transmitter output stages
• CPC Class Codes: H03F 3/45475 using IC blocks as the active amplifying circuit

Abstract

Narrow band tunable radio frequency (RF) power amplifiers (PAs) and related methods are disclosed that provide narrow band tunable gain responses, such as linear gain responses, that can be selected for different frequency bands. The narrow band tunable PAs thereby provide out-of-band rejection for different selectable frequency bands so that narrow band filters are not required in the transmit input path for communication devices. The pass band location and/or bandwidth for the narrow band gain response can be tuned using different techniques, as desired. The narrow band tunable PAs can also be fabricated using CMOS processing, if desired, so that a CMOS PA integrated circuit is provided.

Claims

1. A narrow band tunable radio frequency (RF) power amplifier, comprising:

amplifier circuitry configured to receive a radio frequency (RF) signal and to generate an amplified RF output signal, the amplifier circuitry configured to provide a narrow band gain response tunable across a plurality of different frequency bands based upon one or more tuning control signals, and the narrow band gain response being linear across the different frequency bands; and

control circuitry configured to provide the one or more tuning control signals to the amplifier circuitry based upon a frequency band selection signal;

wherein each of the plurality of different frequency bands are associated with a different communication system;

wherein the narrow band gain response is configured to pass frequencies within a selected frequency band and to reject frequencies outside the selected frequency band; and

wherein the amplifier circuitry and the control circuitry are integrated on the same integrated circuit.

2. The narrow band tunable RF power amplifier of claim 1, wherein the amplifier circuitry and the control circuitry are fabricated using CMOS processing.

3. The narrow band tunable RF power amplifier of claim 1, wherein the amplifier circuitry comprises one or more amplifier stages and one or more tunable resonant structures associated with the one or more amplifier stages, each tunable resonant structure being configured to receive the one or more tuning control signals to adjust the narrow band gain response for the amplifier circuitry.

4. The narrow band tunable RF power amplifier of claim 3, wherein the one or more tunable resonant structures comprise one or more variable capacitors.

5. The narrow band tunable RF power amplifier of claim 3, wherein a center frequency for the narrow band gain response is adjustable.

6. The narrow band tunable RF power amplifier of claim 5, wherein a bandwidth for the narrow band gain response is adjustable.

7. The narrow band tunable RF power amplifier of claim 1, wherein the plurality of frequency bands are above 600 MHz.

8. The narrow band tunable RF power amplifier of claim 1, wherein the amplifier circuitry comprises single-ended input signals and output signals.

9. The narrow band tunable RF power amplifier of claim 1, wherein the amplifier circuitry comprises differential input signals and output signals.

10. The narrow band tunable RF power amplifier of claim 1, further comprising:

a transmit input pin coupled to the amplifier circuitry and configured to receive the RF signal;

a transmit output pin coupled to the amplifier circuitry and configured to output the amplified RF signal; and

at least one band selection input pin coupled to the control circuitry and configured to receive a band selection signal.

11. The narrow band tunable RF power amplifier of claim 10, wherein the band selection signal comprises a signal configured to be provided to an antenna switch module for a communication device.

12. The narrow band tunable RF power amplifier of claim 1, further comprising:

a transmit input pin coupled to the amplifier circuitry and configured to receive the RF signal;

a transmit output pin coupled to the amplifier circuitry and configured to output the amplified RF signal; and

at least one control input pin coupled to the control circuitry and configured to receive control signals, the control signals being configured to provide band selection.

13. The narrow band tunable RF power amplifier of claim 1, further comprising one or more internal control signals coupled to the control circuitry to adjust the narrow band gain response.

14. A method for operating a narrow band tunable radio frequency (RF) power amplifier, comprising:

selecting a frequency band of operation for a narrow band tunable RF power amplifier from a plurality of different frequency bands, each of the plurality of different frequency bands being associated with a different communication system;

tuning the narrow band tunable RF power amplifier to have a narrow band gain response for the selected frequency band, the narrow band gain response being configured to pass frequencies within a selected frequency band and to reject frequencies outside the selected frequency band;

receiving a radio frequency (RF) signal;

amplifying the RF input signal using the tuned narrow band gain response, the narrow band gain response being linear across the selected frequency band; and

outputting the amplified RF signal;

wherein the selecting, tuning, receiving, amplifying and outputting steps are performed within a single integrated circuit.

15. The method of claim 14, wherein the selecting, tuning, receiving, amplifying and outputting steps are performed within a single CMOS integrated circuit.

16. The method of claim 14, wherein the tuning step comprises tuning one or more resonant structures associated with one or more amplifier stages to adjust the narrow band gain response.

17. The method of claim 16, wherein the tuning step further comprises tuning one or more variable capacitors within the one or more tunable resonant structures.

18. The method of claim 16, wherein the tuning step comprises tuning a center frequency for the narrow band gain response.

19. The method of claim 18, wherein the tuning step comprises tuning a bandwidth for the narrow band gain response.

20. The method of claim 14, wherein the plurality of frequency bands are above 600 MHz.

21. The method of claim 14, wherein the receiving step comprises receiving the RF signal through a transmit input pin, wherein the outputting step comprises outputting the amplified RF signal through a transmit output pin, and wherein selecting step comprises using a band selection signal received through at least one band selection input pin.

22. The method of claim 21, wherein the band selection signal comprises a signal configured to be provided to an antenna switch module for a communication device.

23. The method of claim 14, wherein the receiving step comprises receiving the RF signal through a transmit input pin, wherein the outputting step comprises outputting the amplified RF signal through a transmit output pin, and wherein selecting step comprises using control signals received through at least one control input pin.

24. The method of claim 14, wherein the tuning step further comprises using one or more internal control signals to adjust the narrow band gain response.