Light emitting device and method of manufacturing the same
First Claim
1. A method of manufacturing a light emitting device, the method comprising:
- forming an N-type semiconductor layer, an active layer, and a P-type semiconductor layer on a substrate;
etching the P-type semiconductor layer and active layer to form a plurality of trenches arranged in a mesh structure, the trenches to expose the N-type semiconductor layer; and
forming a mesh structured conductive layer directly on and in contact with the N-type semiconductor layer by disposing a conductive material in the trenches.
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Abstract
There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
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Citations
10 Claims
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1. A method of manufacturing a light emitting device, the method comprising:
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forming an N-type semiconductor layer, an active layer, and a P-type semiconductor layer on a substrate; etching the P-type semiconductor layer and active layer to form a plurality of trenches arranged in a mesh structure, the trenches to expose the N-type semiconductor layer; and forming a mesh structured conductive layer directly on and in contact with the N-type semiconductor layer by disposing a conductive material in the trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a light emitting device, the method comprising:
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forming an N-type semiconductor layer, an active layer, and a P-type semiconductor layer on a substrate; etching the P-type semiconductor layer and active layer to form a plurality of trenches comprising a mesh structure, the trenches to expose the N-type semiconductor layer; forming a conductive layer on the N-type semiconductor layer by disposing a conductive material in the trenches; forming an insulating layer on the conductive layer; forming a transparent electrode on the P-type semiconductor layer after forming the insulating layer; forming a second electrode on the transparent electrode; and removing at least a portion of the transparent electrode to expose a portion of the P-type semiconductor layer before forming the second electrode, wherein the second electrode is formed to be in contact with the exposed P-type semiconductor layer.
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Specification