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Light emitting device and method of manufacturing the same

  • US 8,247,244 B2
  • Filed: 09/15/2010
  • Issued: 08/21/2012
  • Est. Priority Date: 06/19/2008
  • Status: Active Grant
First Claim
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1. A method of manufacturing a light emitting device, the method comprising:

  • forming an N-type semiconductor layer, an active layer, and a P-type semiconductor layer on a substrate;

    etching the P-type semiconductor layer and active layer to form a plurality of trenches arranged in a mesh structure, the trenches to expose the N-type semiconductor layer; and

    forming a mesh structured conductive layer directly on and in contact with the N-type semiconductor layer by disposing a conductive material in the trenches.

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