Supplying power to integrated circuits using a grid matrix formed of through-silicon vias
First Claim
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1. An integrated circuit structure comprising:
- a chip comprising a substrate; and
a power distribution network comprising;
a plurality of power through-silicon vias (TSVs) penetrating the substrate, wherein the plurality of power TSVs forms a grid, and wherein the plurality of power TSVs comprises;
a plurality of VDD TSVs electrically interconnected to each other; and
a plurality of VSS TSVs electrically interconnected to each other and disconnected from the plurality of VDD TSVs, wherein the plurality of VDD TSVs and the plurality of VSS TSVs are allocated in an alternating pattern; and
a plurality of metal lines, wherein the plurality of metal lines couples the plurality of power TSVs to integrated circuit devices on the substrate.
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Abstract
An integrated circuit structure includes a chip including a substrate and a power distribution network. The power distribution network includes a plurality of power through-silicon vias (TSVs) penetrating the substrate, wherein the plurality of power TSVs forms a grid; and a plurality of metal lines in a bottom metallization layer (M1), wherein the plurality of metal lines couples the plurality of power TSVs to integrated circuit devices on the substrate.
63 Citations
20 Claims
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1. An integrated circuit structure comprising:
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a chip comprising a substrate; and a power distribution network comprising; a plurality of power through-silicon vias (TSVs) penetrating the substrate, wherein the plurality of power TSVs forms a grid, and wherein the plurality of power TSVs comprises; a plurality of VDD TSVs electrically interconnected to each other; and a plurality of VSS TSVs electrically interconnected to each other and disconnected from the plurality of VDD TSVs, wherein the plurality of VDD TSVs and the plurality of VSS TSVs are allocated in an alternating pattern; and a plurality of metal lines, wherein the plurality of metal lines couples the plurality of power TSVs to integrated circuit devices on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An integrated circuit structure comprising:
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a chip comprising a semiconductor substrate; a first plurality of VDD through-silicon vias (TSVs) penetrating the semiconductor substrate; a first plurality of VSS TSVs penetrating the semiconductor substrate, wherein the first plurality of VDD TSVs and the first plurality of VSS TSVs form a first grid, and are allocated in a substantially alternating pattern in each row and each column of the first grid; a transistor on a front side of the semiconductor substrate; a first plurality of redistribution lines (RDLs) on a backside of the semiconductor substrate opposite the front side, wherein each of the first plurality of RDLs electrically couples a portion of the first plurality of VDD TSVs; and a second plurality of RDLs on the backside of the semiconductor substrate, wherein each of the second plurality of RDLs electrically couples a portion of the first plurality of VSS TSVs. - View Dependent Claims (17, 18, 19, 20)
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Specification