Light emitting display device and method for manufacturing the same

• US 8,247,965 B2
• Filed: 11/05/2004
• Issued: 08/21/2012
• Est. Priority Date: 11/14/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Maekawa, Shinji, Nakamura, Osamu
• Primary Examiner(s): Mai, Anh
• Assistant Examiner(s): Hanley, Britt D
• Application Number:
  US10/576,867
• Publication Number:
  US 20070132377A1
• Time in Patent Office: 2,846 Days
• Field of Search: None
• US Class Current: 313/506
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76888 By rendering at least a portion of the conductor non conductive, e.g. oxidation
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object of the invention is to provide a display device which can be manufactured with usability of a material improved and with a manufacturing step simplified and to provide a manufacturing technique thereof. One feature of a light emitting display device of the present invention is to comprise a gate electrode formed over a substrate having an insulating surface with a substance having a photocatalytic function therebetween, a gate insulating layer formed over the gate electrode, a semiconductor layer and a first electrode formed over the gate insulating layer, a wiring layer formed over the semiconductor layer, a partition wall covering an edge portion of the first electrode and the wiring layer, an electroluminescent layer over the first electrode, and a second electrode over the electroluminescent layer, wherein the wiring layer covers the edge portion of the first electrode.

Claims

1. A light emitting display device comprising:

a base film including a substance with a photocatalytic function formed on a substrate;

a gate electrode formed over and in direct contact with the base film;

a gate insulating layer formed over the gate electrode;

a semiconductor layer and a first electrode formed over the gate insulating layer;

a wiring layer formed over the semiconductor layer;

a partition wall covering an edge portion of the first electrode and the wiring layer;

an electroluminescent layer over the first electrode; and

a second electrode over the electroluminescent layer,

wherein the wiring layer covers the edge portion of the first electrode.

5. A light emitting display device according to any one of claims 1 to 4, wherein the substance having the photocatalytic function comprises titanium oxide.

10. A light emitting display device according to any one of claims 1 to 4 and 6 to 9, wherein the gate electrode and the wiring layer are made of a material selected from the group consisting of silver, gold, copper, and indium tin oxide.

11. A light emitting display device according to any one of claims 1 to 4 and 6 to 9, wherein the semiconductor layer is a semi-amorphous semiconductor containing hydrogen and halogen and having a crystal structure.

12. A TV set including a display screen having the light emitting display device according to any one of claims 1 to 4 and 6 to 9.

24. A light emitting display device according to any one of claims 1 to 4, and 13 to 16, wherein the substance with the photo catalytic function contains an oxygen defect.

25. A light emitting display device according to any one of claims 1, 3, 6, and 8, further comprising an insulating layer covering an edge portion of the semiconductor layer.

2. A light emitting display device comprising:

a base film including a substance with a photocatalytic function formed on a substrate;

a wiring layer and a first electrode formed over and in direct contact with the base film;

a semiconductor layer formed over the wiring layer;

a gate insulating layer formed over the semiconductor layer;

a gate electrode formed over the gate insulating layer;

a partition wall covering an edge portion of the first electrode and the wiring layer;

an electroluminescent layer over the first electrode; and

a second electrode over the electroluminescent layer,

wherein the wiring layer covers the edge portion of the first electrode, and

wherein the substance is selected from cadmium selenide (CdSe), potassium tantalite (KTaO₃), cadmium sulfide (CdS), zirconium oxide (ZrO₂), niobium oxide (Nb₂O₅), and tungsten oxide (WO₃).

3. A light emitting display device comprising:

a base film including a substance with a photocatalytic function formed on a substrate;

a gate electrode formed over and in direct contact with the base film;

a gate insulating layer formed over the gate electrode, the gate electrode having a convex curved face from an edge to an opposite edge;

a semiconductor layer and a first electrode formed over the gate insulating layer;

a wiring layer formed over the semiconductor layer;

a partition wall covering an edge portion of the first electrode and the wiring layer;

an electroluminescent layer over the first electrode; and

a second electrode over the electroluminescent layer,

wherein the first electrode covers an edge portion of the wiring layer.

4. A light emitting display device comprising:

a base film including a substance with a photocatalytic function formed on a substrate;

a wiring layer and a first electrode formed over and in direct contact with the base film;

a semiconductor layer formed over the wiring layer;

a gate insulating layer formed over the semiconductor layer;

a gate electrode formed over the gate insulating layer;

a partition wall covering an edge portion of the first electrode and the wiring layer;

an electroluminescent layer over the first electrode; and

a second electrode over the electroluminescent layer,

wherein the first electrode covers an edge portion of the wiring layer, and

wherein the substance is selected from cadmium selenide (CdSe), potassium tantalite (KTaO₃), cadmium sulfide (CdS), zirconium oxide (ZrO₂), niobium oxide (Nb₂O₅), and tungsten oxide (WO₃).

6. A light emitting display device comprising:

a conductive layer consisting of a refractory metal over a substrate having an insulating surface;

a gate electrode formed over and in direct contact with the conductive layer;

a gate insulating layer formed over the gate electrode;

a semiconductor layer and a first electrode formed over the gate insulating layer;

a wiring layer formed over the semiconductor layer;

a partition wall covering an edge portion of the first electrode and the wiring layer;

an electroluminescent layer over the first electrode; and

a second electrode over the electroluminescent layer,

wherein the wiring layer covers the edge portion of the first electrode.

27. A light emitting display device according to any one of claims 6 to 9, wherein the refractory metal is selected from the group consisting of Ti (titanium), W (tungsten), Cr (chromium), Al (aluminum), Ta (tantalum), Ni (nickel), Zr (zirconium), Hf (hafnium), V (vanadium), Ir (iridium), Nb (niobium), Pd (lead), Pt (platinum), Mo (molybdenum), Co (cobalt), and Rh (rhodium).

7. A light emitting display device comprising:

a conductive layer consisting of a refractory metal over a substrate having an insulating surface;

a wiring layer and a first electrode formed over and in direct contact with the conductive layer;

a semiconductor layer formed over the wiring layer;

a gate insulating layer formed over the semiconductor layer;

a gate electrode formed over the gate insulating layer;

a partition wall covering an edge portion of the first electrode and the wiring layer;

an electroluminescent layer over the first electrode; and

a second electrode over the electroluminescent layer,

wherein the wiring layer covers the edge portion of the first electrode.

8. A light emitting display device comprising:

a conductive layer consisting of a refractory metal over a substrate having an insulating surface;

a gate electrode formed over and in direct contact with the conductive layer, the gate electrode having a convex curved face from an edge to an opposite edge;

a gate insulating layer formed over the gate electrode;

a semiconductor layer and a first electrode formed over the gate insulating layer;

a wiring layer formed over the semiconductor layer;

a partition wall covering an edge portion of the first electrode and the wiring layer;

an electroluminescent layer over the first electrode; and

a second electrode over the electroluminescent layer,

wherein the first electrode covers an edge portion of the wiring layer.

9. A light emitting display device comprising:

a conductive layer consisting of a refractory metal over a substrate having an insulating surface;

a wiring layer and a first electrode formed over and in direct contact with the conductive layer;

a semiconductor layer formed over the wiring layer;

a gate insulating layer formed over the semiconductor layer;

a gate electrode formed over the gate insulating layer;

a partition wall covering an edge portion of the first electrode and the wiring layer;

an electroluminescent layer over the first electrode; and

a second electrode over the electroluminescent layer,

wherein the first electrode covers an edge portion of the wiring layer.

13. A method for manufacturing a light emitting display device, comprising:

forming a base film including a substance with a photocatalytic function on a substrate;

forming a gate electrode over and in contact with the base film having an insulating surface by a first droplet discharge method;

forming a gate insulating layer over the gate electrode;

forming a semiconductor layer over the gate insulating layer;

forming a first electrode over the gate insulating layer by a second droplet discharge method;

forming a wiring layer over the semiconductor layer by a third droplet discharge method to cover an edge portion of the first electrode;

forming a partition wall to cover the edge portion of the first electrode and the wiring layer;

forming an electroluminescent layer over the first electrode; and

forming a second electrode over the electroluminescent layer by a fourth droplet discharge method.

17. A method for manufacturing a light emitting display device according to any one of claims 13 to 16, wherein titanium oxide is used as the substance having the photocatalytic function.

22. A method for manufacturing a light emitting display device according to any one of claims 13 to 16, 18 to 20, and 21, wherein the gate electrode and the wiring layer comprise a material selected from the group consisting of silver, gold, copper, and indium tin oxide.

23. A method for manufacturing a light emitting display device according to any one of claims 13 to 16, 18 to 20, and 21, wherein the semiconductor layer comprises a semi-amorphous semiconductor containing hydrogen and halogen and having a crystal structure.

26. A method for manufacturing a light emitting display device according to any one of claims 13, 15, 18, and 20, further comprising the step of forming an insulating layer covering an edge portion of the semiconductor layer.

14. A method for manufacturing a light emitting display device, comprising:

forming a base film including a substance with a photocatalytic function on a substrate;

forming a first electrode over and in direct contact with the base film having an insulating surface by a first droplet discharge method;

forming a wiring layer over and in contact with the base film having the insulating surface by a second droplet discharge method to cover an edge portion of the first electrode;

forming a semiconductor layer over the wiring layer;

forming a gate insulating layer over the semiconductor layer;

forming a gate electrode over the gate insulating layer by a third droplet discharge method;

forming a partition wall to cover the edge portion of the first electrode and the wiring layer;

forming an electroluminescent layer over the first electrode; and

forming a second electrode over the electroluminescent layer by a fourth droplet discharge method,

wherein the substance is selected from cadmium selenide (CdSe), potassium tantalite (KTaO₃), cadmium sulfide (CdS), zirconium oxide (ZrO₂), niobium oxide (Nb₂O₅), and tungsten oxide (WO₃).

15. A method for manufacturing a light emitting display device, comprising:

forming a base film including a substance with a photocatalytic function on a substrate;

forming a gate electrode in direct contact with the base film having an insulating surface by a first droplet discharge method;

forming a gate insulating layer over the gate electrode, the gate electrode having a convex curved face from an edge to an opposite edge;

forming a semiconductor layer over the gate insulating layer;

forming a wiring layer over the semiconductor layer by a second droplet discharge method;

forming a first electrode over the gate insulating layer by a third droplet discharge method to cover an edge portion of the wiring layer;

forming a partition wall to cover an edge portion of the first electrode and the wiring layer;

forming an electroluminescent layer over the first electrode; and

forming a second electrode over the electroluminescent layer by a fourth droplet discharge method.

16. A method for manufacturing a light emitting display device, comprising:

forming a base film including a substance with a photocatalytic function on a substrate;

forming a wiring layer over and in direct contact with the base film having an insulating surface by a first droplet discharge method;

forming a first electrode over and in direct contact with the base film having the insulating surface by a second droplet discharge method to cover an edge portion of the wiring layer;

forming a semiconductor layer over the wiring layer;

forming a gate insulating layer over the semiconductor layer;

forming a gate electrode over the gate insulating layer by a third droplet discharge method;

forming a partition wall to cover an edge portion of the first electrode and the wiring layer;

forming an electroluminescent layer over the first electrode; and

forming a second electrode over the electroluminescent layer by a fourth droplet discharge method,

wherein the substance is selected from cadmium selenide (CdSe), potassium tantalite (KTaO₃), cadmium sulfide (CdS), zirconium oxide (ZrO₂), niobium oxide (Nb₂O₅), and tungsten oxide (WO₃).

18. A method for manufacturing a light emitting display device, comprising:

forming a conductive layer consisting of a refractory metal over a substrate having an insulating surface;

forming a gate electrode over and in direct contact with the conductive layer by a first droplet discharge method;

forming a gate insulating layer over the gate electrode;

forming a semiconductor layer over the gate insulating layer;

forming a first electrode over the gate insulating layer by a second droplet discharge method;

forming a wiring layer over the semiconductor layer by a third droplet discharge method to cover an edge portion of the first electrode;

forming a partition wall to cover the edge portion of the first electrode and the wiring layer;

forming an electroluminescent layer over the first electrode; and

forming a second electrode over the electroluminescent layer by a fourth droplet discharge method.

28. A method for manufacturing a light emitting display device according to any one of claims 18 to 21, wherein the refractory metal is selected from the group consisting of Ti (titanium), W (tungsten), Cr (chromium), Al (aluminum), Ta (tantalum), Ni (nickel), Zr (zirconium), Hf (hafnium), V (vanadium), Ir (iridium), Nb (niobium), Pd (lead), Pt (platinum), Mo (molybdenum), Co (cobalt), and Rh (rhodium).

19. A method for manufacturing a light emitting display device, comprising:

forming a conductive layer consisting of a refractory metal over a substrate having an insulating surface;

forming a first electrode over and in direct contact with the conductive layer by a first droplet discharge method;

forming a wiring layer over and in direct contact with the conductive layer by a second droplet discharge method to cover an edge portion of the first electrode;

forming a semiconductor layer over the wiring layer;

forming a gate insulating layer over the semiconductor layer;

forming a gate electrode over the gate insulating layer by a third droplet discharge method;

forming a partition wall to cover the edge portion of the first electrode and the wiring layer;

forming an electroluminescent layer over the first electrode; and

forming a second electrode over the electroluminescent layer by a fourth droplet discharge method.

20. A method for manufacturing a light emitting display device, comprising:

forming a conductive layer consisting of a refractory metal over a substrate having an insulating surface;

forming a gate electrode over and in direct contact with the conductive layer by a first droplet discharge method, the gate electrode having a convex curved face from an edge to an opposite edge;

forming a gate insulating layer over the gate electrode;

forming a semiconductor layer over the gate insulating layer;

forming a wiring layer over the semiconductor layer by a second droplet discharge method;

forming a first electrode over the gate insulating layer by a third droplet discharge method to cover an edge portion of the wiring layer;

forming a partition wall to cover an edge portion of the first electrode and the wiring layer;

forming an electroluminescent layer over the first electrode; and

forming a second electrode over the electroluminescent layer by a fourth droplet discharge method.

21. A method for manufacturing a light emitting display device, comprising:

forming a conductive layer consisting of a refractory metal over a substrate having an insulating surface;

forming a wiring layer over and in direct contact with the conductive layer by a first droplet discharge method;

forming a first electrode over and in direct contact with the conductive layer by a second droplet discharge method to cover an edge portion of the wiring layer;

forming a semiconductor layer over the wiring layer;

forming a gate insulating layer over the semiconductor layer;

forming a gate electrode over the gate insulating layer by a third droplet discharge method;

forming a partition wall to cover an edge portion of the first electrode and the wiring layer;

forming an electroluminescent layer over the first electrode; and

forming a second electrode over the electroluminescent layer by a fourth droplet discharge method.